SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-250
FEATURES
• Ultra high optical output
• Four wire bonds on die corners
• Very uniform optical beam
• Standard 3-lead TO-39 hermetic package
• Chip size: 0.026 x 0.026
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two Anode
pins must be externally connected together.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
TEST CONDITIONS
I = 500mA
MIN
160
TYP
250
850
40
MAX
UNITS
mW
o
F
Peak Emission Wavelength, λ
I = 50mA
F
nm
P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
I = 50mA
F
nm
I = 50mA
F
110
1.7
30
Deg
Volts
Volts
nsec
nsec
Forward Voltage, V
I = 500mA
F
F
2
Reverse Breakdown Voltage, V
Rise Time
I
= 10μA
= 50mA
= 50mA
5
R
R
I
I
20
FP
FP
Fall Time
20
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
1000mW
500mA
1.5A
Continuous Forward Current
Peak Forward Current (10μs, 200Hz)2
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-40°C to 100°C
Maximum Junction Temperature
100°C
1
Thermal Resistance, R
THJA
2
Thermal Resistance, R
THJA
145°C/W Typical
75°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013