Datasheet > NX8510UD49-A

NX8510UD49-A

更新时间： 2024-10-02 19:38:11

品牌	Logo	应用领域
瑞萨 - RENESAS		通信光纤
页数	文件大小	规格书
9页	130K
描述
DFB Laser Diode Emitter, 1488nm Min, 1492nm Max, 2500Mbps, LC Connector, Through Hole Mount, TOSA, 4 PIN

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NX8510UD49-A 数据手册

PRELIMINARY DATA SHEET

LASER DIODE

NX8510UD Series

1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s

InGaAsP MQW-DFB LASER DIODE TOSA

DESCRIPTION

The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well (MQW)

structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical

sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package

designed for SFF/SFP transceiver with LC duplex receptacle. This device is

ideal for 2.5 Gb/s CWDM application.

FEATURES

•

Internal optical isolator

Optical output power

P^f= 2.0 mW

Peak emission wavelength

Low threshold current

λ^p= 1 470 to 1 610 nm (Based on CWDM)

l^th= 10 mA TYP. @ TC = 25°C

T^C= −20 to +85°C

Operating case temperature range

Side mode suppression ratio

InGaAs monitor PIN-PD

Small package

SMSR = 40 dB

φ 3.8 mm TOSA (Total length 12.0 mm MAX.)

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PL10434EJ02V0DS (2nd edition)

Date Published March 2004 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices 2003, 2004

12 3 4 5 6 7...9

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