Datasheet > NV24C512MUW3VTBG

NV24C512MUW3VTBG

更新时间： 2024-02-08 01:47:32

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	201K
描述
EEPROM

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中文翻译

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NV24C512MUW3VTBG 数据手册

NV24C512WF

EEPROM Serial 512-Kb I²C

-ꢀAutomotive Grade 1

inꢀWettable Flank UDFN

Package

www.onsemi.com

Description

The NV24C512WF is a EEPROM Serial 512−Kb I C, internally

organized as 65,536 words of 8 bits each.

It features a 128−byte page write buffer and supports the Standard

(100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I C protocol.

Write operations can be inhibited by taking the WP pin High (this

protects the entire memory).

External address pins make it possible to address up to eight

NV24C512WF devices on the same bus.

UDFN−8

(WETTABLE FLANK)

MUW3 SUFFIX

CASE 517DH

On−Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

MARKING DIAGRAM

Features

C9W

AWLYWG

• Automotive Temperature Grade 1 (−40°C to +125°C)

• Supports Standard, Fast and Fast−Plus I C Protocol

C9W= Specific Device Code

= Assembly Site

WL = Wafer Lot Number

• 2.5 V to 5.5 V Supply Voltage Range

• 128−Byte Page Write Buffer

YW = Assembly Start Week

• Hardware Write Protection for Entire Memory

= Pb−Free Package

• Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs

(SCL and SDA)

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

PIN FUNCTION

Pin Name

Function

A , A , A

Device Address

Serial Data

Serial Clock

Write Protect

Power Supply

Ground

• 8−lead SOIC, TSSOP, UDFN and 8−ball WLCSP Packages

SDA

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

SCL

Compliant

SCL

ORDERING INFORMATION

See detailed ordering and shipping information on page 9 of

this data sheet.

NV24C512

SDA

A , A , A

Figure 1. Functional Symbol

Publication Order Number:

May, 2018 − Rev. 0

NV24C512WF/D

12 3 4 5 6 7...12

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