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NTLTD7900ZR2G

更新时间： 2024-09-24 02:53:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 178K
描述
Power MOSFET 9 A, 20 V, Logic Level, N-Channel Micro8 TM Leadless

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NTLTD7900ZR2G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：LEAD FREE, LEADLESS, CASE 846C-01, MICRO-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.22
Is Samacsys：N其他特性：ESD PROTECTED
外壳连接：DRAIN配置：COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.026 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XDSO-N8
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：3.2 W
最大脉冲漏极电流 (IDM)：30 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：NO LEAD
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTLTD7900ZR2G 数据手册

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NTLTD7900ZR2  
Power MOSFET  
9 A, 20 V, Logic Level, N−Channel  
Micro8] Leadless  
EZFETs™ are an advanced series of Power MOSFETs which  
contain monolithic back−to−back Zener diodes. These Zener diodes  
provide protection against ESD and unexpected transients. These  
http://onsemi.com  
9 AMPERES  
20 VOLTS  
RDS(on) = 26 mW  
(VGS = 4.5 V, ID = 6.5 A)  
miniature surface mount MOSFETs feature ultra low R  
and true  
DS(on)  
logic level performance. EZFET devices are designed for use in low  
voltage, high speed switching applications where power efficiency is  
important. Typical applications are DC−DC converters, and power  
management in portable and battery powered products such as  
computers, printers, cellular and cordless phones.  
R
DS(on) = 31 mW  
(VGS = 2.5 V, ID = 5.8 A)  
Features  
D
D
• Pb−Free Package is Available  
Applications  
• Zener Protected Gates Provide Electrostatic Discharge Protection  
• Designed to Withstand 4000 V Human Body Model  
2.4 kW  
N−Channel  
1
2.4 kW  
• Ultra Low R  
Provides Higher Efficiency and Extends  
DS(on)  
G
G
2
1
Battery Life  
• Logic Level Gate Drive − Can be Driven by Logic ICs  
S
1
S
2
• Micro8 Leadless Surface Mount Package − Saves Board Space  
N−Channel  
• I  
Specified at Elevated Temperature  
DSS  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Steady  
State  
1
7900  
AYWW  
Rating  
Symbol  
V
10 Sec  
Unit  
V
G
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Continuous Drain Current (Note 1)  
20  
12  
DSS  
Micro8 LEADLESS  
CASE 846C  
V
GS  
V
I
D
A
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
T = 25°C  
A
9.0  
6.4  
6.0  
4.3  
A
T = 85°C  
= Pb−Free Package  
Pulsed Drain Current  
I
30  
A
A
DM  
(tp v 10 ms)  
Continuous Source−Diode  
I
s
2.9  
1.4  
PIN ASSIGNMENT  
Conduction (Note 1)  
Total Power Dissipation (Note 1)  
P
W
D
Drain  
Drain  
Drain  
Drain  
Source 1  
Gate 1  
8
7
6
5
1
2
3
4
T = 25°C  
3.2  
1.7  
1.5  
A
T = 85°C  
0.79  
A
Drain  
Source 2  
Gate 2  
Operating Junction and Storage  
Temperature Range  
T , T  
J
−55 to 150  
38 82  
°C  
stg  
Thermal Resistance (Note 1)  
R
°C/W  
q
JA  
Junction−to−Ambient  
(Bottom View)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to 1″ x 1″ FR−4 board.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 6  
NTLTD7900ZR2/D  
12345678

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NTLTD7900ZR2G 替代型号

型号 品牌 替代类型 描述 数据表
NTLTD7900ZR2 ONSEMI

功能相似

 9 A, 20 V, Logic Level, N−Channel Micro−8 Leadless

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