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NSC800V PDF预览

NSC800V

更新时间: 2024-01-26 20:01:24
品牌 Logo 应用领域
美国国家半导体 - NSC 微处理器
页数 文件大小 规格书
76页 783K
描述
NSC800TM High-Performance Low-Power CMOS Microprocessor

NSC800V 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:DIP, DIP40,.6Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
位大小:8JESD-30 代码:R-PDIP-T40
JESD-609代码:e0端子数量:40
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP40,.6封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
速度:2.5 MHz子类别:Microprocessors
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALuPs/uCs/外围集成电路类型:MICROPROCESSOR, RISC
Base Number Matches:1

NSC800V 数据手册

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June 1992  
NSC800TM High-Performance  
Low-Power CMOS Microprocessor  
General Description  
Features  
Y
Fully compatible with Z80 instruction set:  
É
The NSC800 is an 8-bit CMOS microprocessor that func-  
tions as the central processing unit (CPU) in National Semi-  
conductor’s NSC800 microcomputer family. National’s  
microCMOS technology used to fabricate this device pro-  
vides system designers with performance equivalent to  
comparable NMOS products, but with the low power advan-  
tage of CMOS. Some of the many system functions incorpo-  
rated on the device, are vectored priority interrupts, refresh  
control, power-save feature and interrupt acknowledge. The  
NSC800 is available in dual-in-line and surface mounted  
chip carrier packages.  
Powerful set of 158 instructions  
10 addressing modes  
22 internal registers  
Y
Y
Y
Y
Y
Y
Y
Y
Low power: 50 mW at 5V V  
Unique power-save feature  
Multiplexed bus structure  
CC  
Schmitt trigger input on reset  
On-chip bus controller and clock generator  
b
Variable power supply 2.4V 6.0V  
On-chip 8-bit dynamic RAM refresh circuitry  
The system designer can choose not only from the dedicat-  
ed CMOS peripherals that allow direct interfacing to the  
NSC800 but from the full line of National’s CMOS products  
to allow a low-power system solution. The dedicated periph-  
erals include NSC810A RAM I/O Timer, NSC858 UART,  
and NSC831 I/O.  
Speed: 1.0 ms instruction cycle at 4.0 MHz  
NSC800-4 4.0 MHz  
NSC800-35 3.5 MHz  
NSC800-3  
NSC800-1  
2.5 MHz  
1.0 MHz  
Y
Y
Capable of addressing 64k bytes of memory and 256  
I/O devices  
All devices are available in commercial, industrial and mili-  
tary temperature ranges along with two added reliability  
flows. The first is an extended burn in test and the second is  
the military class C screening in accordance with Method  
5004 of MIL-STD-883.  
Five interrupt request lines on-chip  
Block Diagram  
TL/C/517173  
NSC800TM is a trademark of National Semiconductor Corp.  
TRI-STATEÉ is a registered trademark of National Semiconductor Corp.  
Z80É is a registered trademark of Zilog Corp.  
C
1995 National Semiconductor Corporation  
TL/C/5171  
RRD-B30M105/Printed in U. S. A.  

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