Datasheet > NPA1003_15

NPA1003_15

更新时间： 2024-10-02 01:23:19

品牌	Logo	应用领域
泰科 - TE		/
页数	文件大小	规格书
8页	1614K
描述
20-1500 MHz MMIC Amplifier

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NPA1003_15 数据手册

NPA1003

Gallium Nitride 28V, 5W, 20-1500 MHz MMIC Amplifier

Built using the SIGANTIC^®process - A proprietary GaN-on-Silicon technology

Features



Broadband operation from 20-1500 MHz

28V Operation

Input and output matched to 50 ohms

Industry Standard QFN Plastic Package

High Drain Efficiency (>50%)

Applications



Broadband General Purpose

Defense Communications

Land Mobile Radio

20-1500 MHz

GaN MMIC PA

Wireless Infrastructure

VHF/UHF/L-Band Radar

Product Description

The NPA1003 is a wideband, internally-matched, GaN MMIC power amplifier optimized for 20-

1500 MHz operation. This device has been designed for CW, pulsed, and linear operation with

output power levels exceeding 5W (37 dBm) in an industry standard, surface mount, QFN4X4-16

plastic package.

RF Specifications (CW, 1000 MHz): V_DS= 28V, I_DQ= 100mA, T_C= 25°C

Symbol

Parameter

Min

Typ

Max

Units

G_SS

Small-signal Gain

P_SAT

Saturated Output Power

38.5

dBm

Efficiency at Saturated Output Power

Noise Figure

_SAT

2.0

G_P

PAE

V_DS

Gain at P_OUT= 5W

Power Added Efficiency at P_OUT= 5W

Drain Voltage

Ruggedness: Output Mismatch, all phase angles

VSWR = 10:1, No Device Damage



Page 1

NDS-030 Rev. 4, 011414

12 3 4 5 6 7 8

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