NPA1006
GaN Wideband Power Amplifier, 28 V, 12.5 W
20 - 1000 MHz
Rev. V2
Features
GaN on Si HEMT D-Mode Amplifier
Suitable for linear and saturated applications
Broadband operation from 20 - 1000 MHz
50 Ω Input Matched, Output Unmatched
28 V Operation
14 dB Gain @ 900 MHz
65% Drain Efficiency @ 900 MHz
100% RF Tested
Lead-Free 6 x 5 mm 8-lead PDFN Package
Halogen-Free “Green” Mold Compound
RoHS* Compliant
Functional Schematic
Description
VG
1
8
7
6
5
N/C
The NPA1006 is a wideband GaN power amplifier
optimized for 20 - 1000 MHz operation. This
amplifier has been designed for saturated and linear
operation with output levels to 12.5 W (41 dBm)
assembled in a lead-free 6 x 5 mm 8-lead PDFN
plastic package.
RFOUT
VD
/
/
RFIN
2
Input
Match
RFOUT
VD
RFIN
N/C
3
4
The NPA1006 is ideally suited for general purpose
narrowband to broadband applications in test and
measurement, defense communications, land
mobile radio and wireless infrastructure.
9
N/C
Paddle
Pin Designations
Pin No.
Pin Name
VG
Function
Ordering Information
1
2
3
4
5
6
7
8
9
Gate Voltage
RF Input
Part Number
NPA1006
Package
RFIN
Bulk Quantity
Sample Board
RFIN
RF Input
NPA1006-SMB
N/C1
No Connection
No Connection
N/C1
RFOUT / VD
RFOUT / VD
N/C1
RF Output / Drain Voltage
RF Output / Drain Voltage
No Connection
Paddle2
Ground
1. All no connection pins may be left floating or grounded.
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also provide
a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union
Directive 2011/65/EU.
1
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