Datasheet > NP45N06VDK-E1-AY

NP45N06VDK-E1-AY

更新时间： 2024-09-25 01:14:43

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	371K
描述
N-channel Power MOS FET

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NP45N06VDK-E1-AY 数据手册

Data Sheet

NP45N06VDK

60 V – 45 A – N-channel Power MOS FET

R07DS1295EJ0100

Rev.1.00

Oct 26, 2015

Application: Automotive

Description

NP45N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Super low on-state resistance

⎯ R_DS(on)1= 11.6 mΩ MAX. (V_GS= 10 V, I_D= 23 A)

Low C_iss: C_iss= 1530 pF TYP. (V_DS= 25 V)

Designed for automotive application and AEC-Q101 qualified

•

Outline

Drain

Body

Diode

Gate

Source

TO-252(MP-3ZP)

Equivalent circuit

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

Lead Plating

Packing

Taping (E1 type)

Taping (E2 type)

Package

NP45N06VDK-E1-AY ^*

NP45N06VDK-E2-AY ^*

Pure Sn (Tin)

Tape 2500 p/reel

TO-252(MP-3ZP)

Note: *1. Pb-free (This product does not contain Pb in the external electrode)

R07DS1295EJ0100 Rev.1.00

Oct 26, 2015

Page 1 of 7

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