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NP48N055CLE PDF预览

NP48N055CLE

更新时间: 2024-09-24 19:35:55
品牌 Logo 应用领域
瑞萨 - RENESAS 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 79K
描述
48A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN

NP48N055CLE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.25雪崩能效等级(Eas):100 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):48 A
最大漏极电流 (ID):48 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):85 W
最大脉冲漏极电流 (IDM):140 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NP48N055CLE 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP48N055CLE,NP48N055DLE,NP48N055ELE,NP48N055KLE  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
These products are N-channel MOS Field Effect Transistor  
designed for high current switching applications.  
PART NUMBER  
NP48N055CLE  
NP48N055DLE  
NP48N055ELE  
NP48N055KLE  
PACKAGE  
TO-220AB  
TO-262  
FEATURES  
TO-263 (MP-25ZJ)  
TO-263 (MP-25ZK)  
Channel temperature 175 degree rated  
Super low on-state resistance  
RDS(on)1 = 17 mMAX. (VGS = 10 V, ID = 24 A)  
RDS(on)2 = 21 mMAX. (VGS = 5 V, ID = 24 A)  
Low Ciss: Ciss = 1970 pF TYP.  
Built-in gate protection diode  
(TO-220AB)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
55  
±20  
±48  
±140  
1.8  
V
V
A
Drain Current (pulse) Note1  
A
Total Power Dissipation (TA = 25°C)  
Total Power Dissipation (TC = 25°C)  
Channel Temperature  
W
W
°C  
°C  
A
(TO-262)  
PT  
85  
Tch  
175  
Storage Temperature  
Tstg  
55 to +175  
46/27/10  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
2.1/73/100  
mJ  
Notes 1. PW 10 µs, Duty cycle 1%  
(TO-263)  
2. Starting Tch = 25°C, RG = 25 , VGS = 20 0 V (see Figure 4.)  
THERMAL RESISTANCE  
Channel to Case Thermal Resistance  
Channel to Ambient Thermal Resistance  
Rth(ch-C)  
Rth(ch-A)  
1.76  
83.3  
°C/W  
°C/W  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14095EJ4V0DS00 (4th edition)  
Date Published December 2002 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1999, 2000  

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