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NP3500SET3G PDF预览

NP3500SET3G

更新时间: 2024-02-09 21:06:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 114K
描述
SILICON SURGE PROTECTOR

NP3500SET3G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.83最大转折电压:400 V
最大维持电流:150 mA最高工作温度:150 °C
最低工作温度:-40 °C子类别:Silicon Surge Protectors
表面贴装:YES触发设备类型:SILICON SURGE PROTECTOR
Base Number Matches:1

NP3500SET3G 数据手册

 浏览型号NP3500SET3G的Datasheet PDF文件第1页浏览型号NP3500SET3G的Datasheet PDF文件第2页浏览型号NP3500SET3G的Datasheet PDF文件第4页浏览型号NP3500SET3G的Datasheet PDF文件第5页浏览型号NP3500SET3G的Datasheet PDF文件第6页浏览型号NP3500SET3G的Datasheet PDF文件第7页 
NPSE Series  
ELECTRICAL CHARACTERISTICS TABLE (T = 25°C unless otherwise noted)  
A
Symbol  
Rating  
Min Typ Max  
Unit  
I
Offstate Current: The dc value of current that results from the applica-  
tion of the offstate voltage  
V
V
= 50 V  
2
5
4
mA  
DRM  
D
= V  
D
DRM  
V
T
Onstate Voltage: The voltage across the device in the onstate condition.  
I = 2.2 A (pk), PW = 300 ms, DC = 2%  
V
T
dv/dt  
di/dt  
Critical rate of rise of offstate voltage: The maximum rate of rise of voltage (below V  
will not cause switching from the offstate to the onstate.  
) that  
5
kV/ms  
DRM  
Linear Ramp between 0.1 V  
and 0.9 V  
DRM  
DRM  
Critical rate of rise of onstate current: rated value of the rate of rise of current which the device  
can withstand without damage.  
500  
A/ms  
C
Offstate Capacitance  
f = 1.0 MHz, V = 1.0 V  
NP0640SET3G  
NP0720SET3G  
NP0900SET3G  
NP1100SET3G  
NP1300SET3G  
NP1500SET3G  
NP1800SET3G  
NP2100SET3G  
NP2300SET3G  
NP2600SET3G  
NP3100SET3G  
NP3500SET3G  
45  
45  
45  
45  
45  
45  
45  
45  
45  
45  
45  
45  
pF  
O
, V = 2 Vdc  
D
d
RMS  
THERMAL CHARACTERISTICS  
Symbol  
Rating  
Value  
65 to +150  
40 to +150  
90  
Unit  
T
Storage Temperature Range  
Junction Temperature  
°C  
°C  
STG  
T
J
R
Thermal Resistance: JunctiontoAmbient Per EIA/JESD513, PCB = FR4 3”x4.5”x0.06”  
Fan out in a 3x3 inch pattern, 2 oz copper track.  
°C/W  
0JA  
ELECTRICAL PARAMETER/RATINGS DEFINITIONS  
+I  
Symbol  
Parameter  
Repetitive Peak Offstate Voltage  
Breakover Voltage  
I
PPS  
V
DRM  
I
TSM  
V
(BO)  
I
T
I
Offstate Current  
V
T
DRM  
I
H
OffState Region  
I
Breakover Current  
(BO)  
I
(BO)  
Voltage  
I
D
+Voltage  
I
H
Holding Current  
I
DRM  
V
Onstate Voltage  
T
V
(BO)  
V
D
I
T
Onstate Current  
V
DRM  
I
Nonrepetitive Peak Onstate Current  
Nonrepetitive Peak Impulse Current  
Offstate Voltage  
TSM  
I
PPS  
V
D
I
D
Offstate Current  
I  
Figure 1. Voltage Current Characteristics of TSPD  
http://onsemi.com  
3

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