NP32N055HHE-AZ

更新时间： 2024-01-04 17:17:02

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	70K
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NP32N055HHE-AZ 数据手册

NP32N055HLE, NP32N055ILE

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

2) TO-252 (MP-3Z)

2.3±0.2

0.5±0.1

6.5±0.2

2.3±0.2

5.0±0.2

0.5±0.1

1.3 MAX.

0.9

0.8

1.3 MAX.

MAX. MAX.

2.3 2.3

0.8

0.6±0.1

1.Gate

1. Gate

2.3 2.3

2. Drain

3. Source

2.Drain

4. Fin (Drain)

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Data Sheet D14137EJ3V0DS

1...3 4 567 8

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与NP32N055HHE-AZ相关器件

型号	品牌	描述	获取价格	数据表
NP32N055HLE	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	获取价格
NP32N055HLE	RENESAS	32A, 55V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, MP-3, 3 PIN	获取价格
NP32N055IDE	RENESAS	32A, 55V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, MP-3Z, 3 PIN	获取价格
NP32N055IDE-AY	NEC	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252	获取价格
NP32N055IDE-AZ	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252AA	获取价格
NP32N055IDE-E1-AY	RENESAS	TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252AA	获取价格