Datasheet > NP32N055IHE-E2

NP32N055IHE-E2

更新时间： 2024-01-04 11:41:07

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	176K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252

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技术参数
数据手册

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NP32N055IHE-E2 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	32 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	66 W
子类别：	FET General Purpose Power	表面贴装：	YES

NP32N055IHE-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP32N055HHE, NP32N055IHE, NP32N055SHE

SWITCHING

N-CHANNEL POWER MOSFET

DESCRIPTION

ORDERING INFORMATION

These products are N-Channel MOS Field Effect

PART NUMBER

PACKAGE

Transistors designed for high current switching applications.

NP32N055HHE

TO-251 (JEITA) / MP-3

TO-252 (JEITA) / MP-3Z

TO-252 (JEDEC) / MP-3ZK

Note

NP32N055IHE

NP32N055SHE

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)= 25 mΩ MAX. (VGS = 10 V, ID = 16 A)

• Low C^iss: Ciss = 1100 pF TYP.

• Built-in gate protection diode

Note Not for new design.

(TO-251)

(TO-252)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

V^GSS

ID(DC)

ID(pulse)

Gate to Source Voltage

±20

±32

Drain Current (DC)

Drain Current (Pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (TC = 25°C)

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Channel Temperature

±100

1.2

I^AS

26 / 21 / 7

EAS

6.7 / 44 / 49 mJ

175 °C

–55 to + 175 °C

Tch

Storage Temperature

T^stg

Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

Rth(ch-C)

Rth(ch-A)

2.27

125

°C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

D14155EJ4V0DS00 (4th edition)

The mark

shows major revised points.

Date Published July 2005 NS CP(K)

Printed in Japan

1999, 2005

12 3 4 5 6 7

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