NP32N055HHE-AZ

更新时间： 2024-02-19 07:43:27

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	70K
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NP32N055HHE-AZ 数据手册

NP32N055HLE, NP32N055ILE

Figure7. DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

Figure6. FORWARD TRANSFER CHARACTERISTICS

120

100

Pulsed

GS =10 V

= −55˚C

25˚C

75˚C

150˚C

175˚C

5.0 V

0.1

4.5 V

DS = 10 V

0.01

1.0

2.0

3.0

4.0

5.0 6.0

GS - Gate to Source Voltage - V

VDS - Drain to Source Voltage - V

Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

Figure8. FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

100

Pulsed

DS = 10 V

Pulsed

= 175˚C

75˚C

I = 16 A

0.1

25˚C

−55˚C

0.01

0.1

100

10 12 14 16 18 20

GS - Gate to Source Voltage - V

ID - Drain Current - A

Figure10. DRAIN TO SOURCE ON-STATE

Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

RESISTANCE vs. DRAIN CURRENT

3.0

Pulsed

DS = V

^Gµ^S

= 250 A

2.0

GS = 10 V

5.0 V

4.5 V

1.0

0.1

100

−50

100

150

D - Drain Current - A

ch - Channel Temperature - ˚C

Data Sheet D14137EJ3V0DS

1 2 345 6 7 8

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