是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 32 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 66 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NP32N055IDE | RENESAS | 32A, 55V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, MP-3Z, 3 PIN |
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NP32N055IDE-AY | NEC | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252 |
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NP32N055IDE-AZ | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252AA |
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NP32N055IDE-E1-AY | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252AA |
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NP32N055IDE-E1-AZ | RENESAS | TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,32A I(D),TO-252AA |
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NP32N055IHE | RENESAS | 32A, 55V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, MP-3Z, 3 PIN |
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