NP32N055HHE-AZ

更新时间： 2024-02-20 11:57:15

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日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲
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NP32N055HHE-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP32N055HLE, NP32N055ILE

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

PART NUMBER

These products are N-channel MOS Field Effect

Transistor designed for high current switching

applications.

PACKAGE

TO-251

NP32N055HLE

NP32N055ILE

TO-252

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)1= 24 mΩ MAX. (V^GS= 10 V, I^D= 16 A)

R^DS(on)2= 29 mΩ MAX. (V^GS= 5.0 V, I^D= 16 A)

• Low C^iss: C^iss= 1300 pF TYP.

• Built-in gate protection diode

(TO-251)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±20

±32

±100

1.2

Gate to Source Voltage

Drain Current (DC)

Drain Current (Pulse) ^Note1

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Single Avalanche Current ^Note2

Single Avalanche Energy ^Note2

Channel Temperature

(TO-252)

P^T

I^AS

28 / 21 / 8

7.8 / 44 / 64

175

E^AS

T^ch

°C

Storage Temperature

T^stg

–55 to +175

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting T^ch= 25°C, R^G= 25 Ω , V^GS= 20 V→0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case

R^th(ch-C)

R^th(ch-A)

2.27

125

°C/W

Channel to Ambient

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published March 2001 NS CP(K)

Printed in Japan

D14137EJ3V0DS00 (3rd edition)

1999

The mark ★ shows major revised points.

12 3 4 5 6 7 8

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