Datasheet > NP32N055HDE-AZ

NP32N055HDE-AZ

更新时间： 2024-01-15 02:57:05

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	290K
描述
NP32N055HDE-AZ

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技术参数
数据手册

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NP32N055HDE-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	32 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	66 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

NP32N055HDE-AZ 数据手册

NP32N055HDE, NP32N055IDE, NP32N055SDE

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate Leakage Current

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

µA

IDSS

VDS = 55 V, VGS = 0 V

100

2.5

IGSS

VGS = ±20 V, VDS = 0 V

V^DS= VGS, ID = 250 µA

VDS = 10 V, ID = 16 A

VGS = 10 V, ID = 16 A

VGS = 5.0 V, ID = 16 A

VGS = 4.5 V, ID = 16 A

VDS = 25 V

Gate to Source Threshold Voltage

VGS(th)

| y^fs|

R^DS(on)1

RDS(on)2

RDS(on)3

Ciss

1.5

Note

Forward Transfer Admittance

Note

mΩ

Drain to Source On-state Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

1300 2000

Coss

VGS = 0 V

180

270

160

Crss

f = 1 MHz

td(on)

VDD = 28 V, ID = 16 A

VGS = 10 V

R^G= 1 Ω

Turn-off Delay Time

Fall Time

td(off)

7.4

Total Gate Charge

QG1

VDD = 44 V, VGS = 10 V, ID = 32 A

VDD = 44 V

QG2

Gate to Source Charge

Gate to Drain Charge

QGS

VGS = 5.0 V

QGD

V^F(S-D)

trr

ID = 32 A

Note

Body Diode Forward Voltage

IF = 32 A, VGS = 0 V

di/dt = 100 A/µs

1.0

Reverse Recovery Time

Reverse Recovery Charge

Qrr

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

= 25 Ω

90%

Wave Form

10%

PG.

GS = 20 → 0 V

PG.

50 Ω

VDD

VDS

90%

BVDSS

10% 10%

Wave Form

IAS

VDS

d(on)

d(off)

VDD

toff

τ = 1 µs

Duty Cycle ≤ 1%

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= 2 mA

PG.

50 Ω

VDD

Data Sheet D15309EJ2V0DS

1 2 345 6 7...9

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