5秒后页面跳转
NM93C66LEM8 PDF预览

NM93C66LEM8

更新时间: 2024-01-23 18:54:50
品牌 Logo 应用领域
美国国家半导体 - NSC 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
12页 175K
描述
256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface)

NM93C66LEM8 技术参数

生命周期:Transferred零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.42
其他特性:MICROWIRE BUS INTERFACE; 2.0V READ; AUTOMATIC WRITE; ERAL AT 3.0V TO 5.5V; DATA RETENTION = 40 YEARS最大时钟频率 (fCLK):0.25 MHz
数据保留时间-最小值:40JESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mm最长写入周期时间 (tWC):15 ms

NM93C66LEM8 数据手册

 浏览型号NM93C66LEM8的Datasheet PDF文件第2页浏览型号NM93C66LEM8的Datasheet PDF文件第3页浏览型号NM93C66LEM8的Datasheet PDF文件第4页浏览型号NM93C66LEM8的Datasheet PDF文件第5页浏览型号NM93C66LEM8的Datasheet PDF文件第6页浏览型号NM93C66LEM8的Datasheet PDF文件第7页 
November 1996  
NM93C06L/C46L/C56L/C66L  
256-/1024-/2048-/4096-Bit Serial EEPROM  
with Extended Voltage (2.7V to 5.5V)  
(MICROWIRETM Bus Interface)  
General Description  
The  
Features  
Y
2.7V to 5.5V operation in all modes  
NM93C06L/C46L/C56L/C66L  
devices  
are  
Y
256/1024/2048/4096 bits, respectively, of non-volatile  
electrically erasable memory divided into 16/64/128/256 x  
16-bit registers (addresses). The NM93CxxL Family func-  
tions in an extended voltage operating range, requires only  
a single power supply and is fabricated using National Semi-  
conductor’s floating gate CMOS technology for high reliabili-  
ty, high endurance and low power consumption. These de-  
vices are available in both SO and TSSOP packages for  
small space considerations.  
Typical active current of 100 mA; Typical standby  
current of 1 mA  
Y
Y
Y
Y
Y
Y
Y
Y
No erase required before write  
Reliable CMOS floating gate technology  
MICROWIRE compatible serial I/O  
Self-timed programming cycle  
Device status during programming mode  
40 years data retention  
6
Endurance: 10 data changes  
The EEPROM Interfacing is MICROWIRE compatible for  
simple interface to standard microcontrollers and micro-  
processors. There are 7 instructions that control these de-  
vices: Read, Erase/Write Enable, Erase, Erase All, Write,  
Write All, and Erase/Write Disable. The ready/busy status  
is available on the DO pin during programming.  
Packages available: 8-pin SO, 8-pin DIP, and 8-pin  
TSSOP  
Block Diagram  
TL/D/10045–1  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
MICROWIRETM is a trademark of National Semiconductor Corporation.  
C
1996 National Semiconductor Corporation  
TL/D/10045  
RRD-B30M126/Printed in U. S. A.  
http://www.national.com  

与NM93C66LEM8相关器件

型号 品牌 获取价格 描述 数据表
NM93C66LEM8X FAIRCHILD

获取价格

EEPROM, 256X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8
NM93C66LEMT8 NSC

获取价格

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bu
NM93C66LEMT8 FAIRCHILD

获取价格

EEPROM, 256X16, Serial, CMOS, PDSO8, PLASTIC, TSSOP-8
NM93C66LEN NSC

获取价格

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bu
NM93C66LM8 NSC

获取价格

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bu
NM93C66LM8X NSC

获取价格

IC 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8, Programmable R
NM93C66LMT8 NSC

获取价格

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bu
NM93C66LMT8X TI

获取价格

256X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, PLASTIC, TSSOP-8
NM93C66LN NSC

获取价格

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bu
NM93C66LVM8 NSC

获取价格

256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bu