是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | DIP | 包装说明: | DIP, DIP8,.3 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.31 | 其他特性: | MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; ERAL AT 3.0V TO 6.0V; DATA RETENTION = 40 YEARS |
最大时钟频率 (fCLK): | 0.25 MHz | 数据保留时间-最小值: | 40 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e0 | 长度: | 9.817 mm |
内存密度: | 256 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 16 words |
字数代码: | 16 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 16X16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | SERIAL |
电源: | 3/5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 串行总线类型: | MICROWIRE |
最大待机电流: | 0.000001 A | 子类别: | EEPROMs |
最大压摆率: | 0.003 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 宽度: | 7.62 mm |
最长写入周期时间 (tWC): | 15 ms | 写保护: | SOFTWARE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
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Microwire Serial EEPROM |
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NM93C06LZVM8 | FAIRCHILD |
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256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchr |
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NM93C06LZVM8 | NSC |
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256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V |
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NM93C06LZVM8X | TI |
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IC 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8, Programmable RO |
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NM93C06LZVM8X | FAIRCHILD |
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EEPROM, 16X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 |
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NM93C06LZVMT8 | NSC |
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256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V |
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NM93C06LZVMT8 | FAIRCHILD |
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256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchr |
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NM93C06LZVMT8X | TI |
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16X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, PLASTIC, TSSOP-8 |
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NM93C06LZVN | FAIRCHILD |
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256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchr |
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