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NM27P512NE120 PDF预览

NM27P512NE120

更新时间: 2024-02-03 03:58:23
品牌 Logo 应用领域
美国国家半导体 - NSC 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 178K
描述
524,288-Bit (64K x 8) Processor Oriented CMOS EPROM

NM27P512NE120 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP, DIP28,.6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:120 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T28
JESD-609代码:e0长度:35.725 mm
内存密度:524288 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:5.334 mm
最大待机电流:0.0001 A子类别:OTP ROMs
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15.24 mmBase Number Matches:1

NM27P512NE120 数据手册

 浏览型号NM27P512NE120的Datasheet PDF文件第1页浏览型号NM27P512NE120的Datasheet PDF文件第2页浏览型号NM27P512NE120的Datasheet PDF文件第4页浏览型号NM27P512NE120的Datasheet PDF文件第5页浏览型号NM27P512NE120的Datasheet PDF文件第6页浏览型号NM27P512NE120的Datasheet PDF文件第7页 
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales  
Office/Distributors for availability and specifications.  
V
Supply Voltage with  
CC  
Respect to Ground  
b
a
0.6V to 7V  
ESD Protection  
(MIL Std. 883, Method 3015.2)  
l
b
a
65 C to 150 C  
Storage Temperature  
2000V  
§
§
All Input Voltages Except A9 with  
Respect to Ground  
All Output Voltages with  
Respect to Ground  
b
a
0.6V to 7V  
a b  
1.0V to GND 0.6V  
V
CC  
b a  
0.7V to 14V  
V
and A9 with Respect to Ground  
PP  
Operating Range  
Range  
Comm’l  
Industrial  
Military  
Temperature  
V
Tolerance  
CC  
a
0 C to 70 C  
a
a
a
g
g
g
5V  
5V  
5V  
10%  
10%  
10%  
§
§
b
a
40 C to 85 C  
§
§
b
a
55 C to 125 C  
§
§
Read Operation  
DC Electrical Characteristics  
Symbol  
Parameter  
Input Low Level  
Test Conditions  
Min  
Max  
08  
Units  
V
b
V
V
V
V
0.5  
IL  
a
Input High Level  
2.0  
V
1
V
IH  
CC  
e
Output Low Voltage  
Output High Voltage  
I
I
2.1 mA  
0.4  
V
OL  
OH  
SB1  
SB2  
CC  
OL  
e b  
e
2.5 mA  
3.5  
V
OH  
(10)  
g
I
I
I
V
CC  
V
CC  
V
CC  
Standby Current (CMOS)  
Standby Current  
CE  
CE  
V
V
0.3V  
100  
1
mA  
mA  
CC  
IH  
e
e
e
e
0 mA  
e
f 5 MHz  
Active Current  
CE  
OE  
V ,  
IL  
40  
10  
mA  
I/O  
e
I
V
V
Supply Current  
Read Voltage  
V
V
CC  
mA  
V
PP  
PP  
PP  
b
V
PP  
V
0.7  
V
CC  
PP  
CC  
e
b
1
I
I
Input Load Current  
V
V
5.5V or GND  
1
mA  
mA  
LI  
LO  
IN  
e
b
10  
Output Leakage Current  
5.5V or GND  
10  
OUT  
AC Electrical Characteristics  
120  
Max  
120  
120  
50  
150  
200  
Symbol  
Parameter  
Units  
Min  
Min  
Max  
150  
150  
50  
Min  
Max  
200  
200  
50  
t
t
t
t
t
t
Address to Output Delay  
CE to Output Delay  
ACC  
CE  
OE to Output Delay  
OE  
ns  
(2)  
Output Disable to Output Float  
Chip Disable to Output Float  
25  
25  
25  
DF  
CF  
(2)  
(2)  
30  
30  
30  
Output Hold from Addresses, CE  
or OE, Whichever Occurred First  
OH  
7
7
7
3

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