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NEZ3642-15D PDF预览

NEZ3642-15D

更新时间: 2024-02-27 05:06:40
品牌 Logo 应用领域
日电电子 - NEC 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
12页 70K
描述
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEZ3642-15D 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 VFET 技术:METAL SEMICONDUCTOR
最高频带:C BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

NEZ3642-15D 数据手册

 浏览型号NEZ3642-15D的Datasheet PDF文件第2页浏览型号NEZ3642-15D的Datasheet PDF文件第3页浏览型号NEZ3642-15D的Datasheet PDF文件第4页浏览型号NEZ3642-15D的Datasheet PDF文件第5页浏览型号NEZ3642-15D的Datasheet PDF文件第6页浏览型号NEZ3642-15D的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
GaAs MES FET  
15 W C-BAND POWER GaAs FET NEZ SERIES  
15 W C-BAND POWER GaAs FET  
N-CHANNEL GaAs MES FET  
DESCRIPTION  
PACKAGE DIMENSIONS (unit: mm)  
The NEZ Series of microwave power GaAs FETs offer  
high output power, high gain and high efficiency at C-band  
for microwave and satellite communications.  
Internal input and output circuits matched to 50 are  
designed to provide good flatness of gain and output  
power in allocated band.  
0.5 ±0.1  
SOURCE  
C1.0 4PLACES  
R1.2 4PLACES  
GATE  
To reduce the thermal resistance, the device has a  
PHS (Plated Heat Sink) structure.  
NEC’s strigent quality assurance and test procedures  
guarantee the highest reliability and performance.  
DRAIN  
20.4 ±0.2  
SELECTION CHART  
20.4 ±0.3  
NEZ PART NUMBER  
NEZ3642-15D, 15DD  
NEZ4450-15D, 15DD  
NEZ5964-15D, 15DD  
NEZ6472-15D, 15DD  
NEZ7785-15D  
FREQUENCY BAND (GHz)  
3.6 to 4.2  
16.0  
4.4 to 5.0  
5.9 to 6.45  
6.4 to 7.2  
16.0  
7.7 to 8.5  
FEATURES  
Internally matched to 50 Ω  
High power output  
High linear gain  
High reliability  
Low distortion  
Document No. P10982EJ1V0DS00 (1st edition)  
Date Published June 1996 P  
Printed in Japan  
1996  
©

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