NEZ3642-4DL

更新时间： 2024-01-28 18:54:15

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管放大器局域网
页数	文件大小	规格书
18页	110K
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中文翻译

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数据手册

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NEZ3642-4DL 数据手册

PRELIMINARY DATA SHEET

GaAs MES FET

4W/8W C-BAND POWER GaAs FET NEZ Series

4W/8W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

PACKAGE DIMENSIONS (unit: mm)

0.5±0.1

The NEZ Series of microwave power GaAs FETs offer

high output power, high gain and high efficiency at C-band

for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are

designed to provide good flatness of gain and output power

in allocated band.

C1.5 4PLACES

GATE

2.4

SOURCE

R1.6 2PLACES

To reduce the thermal resistance, the device has a PHS

(Plated Heat Sink) structure.

NEC’s strigent quality assurance and test procedures

guarantee the highest reliability and performance.

DRAIN

17.0±0.2

21.0±0.3

SELECTION CHART

10.7

NEZ PART NUMBER

NEZ3642-4D, 8D, 8DD

FREQUENCY BAND (GHz)

3.6 to 4.2

NEZ4450-4D, 4DD/8D, 8DD

NEZ5964-4D, 4DD/8D, 8DD

NEZ6472-4D, 4DD/8D, 8DD

NEZ7177-4D, 4DD/8D, 8DD

NEZ7785-4D, 4DD/8D, 8DD

4.4 to 5.0

5.9 to 6.45

12.0

6.4 to 7.2

7.1 to 7.7

7.7 to 8.5

FEATURES

•

Internally matched to 50 Ω

High power output

High linear gain

High reliability

Low distortion

Document No. P10981EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6 7...18

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