Datasheet > NESG3400M01-T1-A

NESG3400M01-T1-A

更新时间： 2024-01-18 12:48:36

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	281K
描述
RF SMALL SIGNAL TRANSISTOR

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中文翻译

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技术参数
数据手册

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NESG3400M01-T1-A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	Base Number Matches：	1

NESG3400M01-T1-A 数据手册

PreliminaryData Sheet

NESG3400M01

NPN Silicon Germanium RF Transistor

R09DS0025EJ0100

Rev.1.00

Jul 26, 2011

DESCRIPTION

The NESG3400M01 is an ideal choice for low noise, low distortion amplification.

FEATURES

•

NF = 0.65 dB TYP. @ V_CE= 3.3 V, I_C= 15 mA, f = 1 GHz

_{o (1 dB)}= 21 dBm TYP. @ V_CE= 3.3 V, I_{C (set)}= 40 mA, f = 1 GHz

OIP₃= 35.5 dBm TYP. @ V_CE= 3.3 V, I_{C (set)}= 50 mA, f = 1 GHz

Maximum stable power gain: MSG =13.0 dB TYP. @ V_CE= 3.3 V, I_C= 40 mA, f = 1 GHz

SiGe HBT technology (UHS3) : f_T= 10 GHz

This product is improvement of ESD

6-pin super minimold (M01 PKG)

APPLICATIONS

•

Suitable for up to 1 GHz applications.

e.g. LNA (Low Noise Amplifier) or Power splitter for Digital-TV.

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

50 pcs

Supplying Form

NESG3400M01

NESG3400M01-A

6-pin super

minimold

(M01 PKG)

(Pb-Free)

•

8 mm wide embossed taping

Pin 4, 5, 6 face the perforation side of

the tape

(Non reel)

NESG3400M01-T1 NESG3400M01-T1-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T_A= +25°C)

Parameter

Symbol

V_CBO

Ratings

5.5

Unit

Collector to Base Voltage

Collector to Emitter Voltage

(Base Short)

V_CES

Collector to Emitter Voltage

(Base Open)

V_CEO

5.5

Base Current ^Note1

I_B

400

°C

Collector Current

I_C

Total Power Dissipation ^Note2

Junction Temperature

Storage Temperature

P_tot

T_j

480

150

T_stg

−65 to +150

°C

Notes: 1. Depend on the ESD protect device.

2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0025EJ0100 Rev.1.00

Jul 26, 2011

Page 1 of 8

12 3 4 5 6 7...10

中文翻译

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与NESG3400M01-T1-A相关器件

型号	品牌	获取价格	描述	数据表
NESG3400M01-T1-A-YFB	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
NESG4030M14	NEC	获取价格	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (
NESG4030M14-A	NEC	获取价格	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (
NESG4030M14-A-YFB	NEC	获取价格	暂无描述
NESG4030M14-FB-A	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4
NESG4030M14-T3	NEC	获取价格	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (
NESG4030M14-T3-A	NEC	获取价格	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (
NESG4030M14-T3-A-FB	RENESAS	获取价格	TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
NESG4030M14-T3-FB-A	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4
NESG4030M14-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN

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