Datasheet > NESG7030M04-T2B

NESG7030M04-T2B

更新时间： 2024-09-24 12:33:19

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
11页	154K
描述
NPN Silicon Germanium Carbon RF Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NESG7030M04-T2B 数据手册

Data Sheet

NESG7030M04

NPN Silicon Germanium Carbon RF Transistor

R09DS0037EJ0100

Rev.1.00

Apr 18, 2012

FEATURES

•

The device is an ideal choice for low noise, high gain amplification.

NF = 0.75 dB TYP. @ V_CE= 2 V, I_C= 5 mA, f = 5.8 GHz

G_a= 14 dB TYP. @ V_CE= 2 V, I_C= 5 mA, f = 5.8 GHz

•

P_{O (1 dB)}= 4.5 dBm TYP. @ V_CE= 2 V, I_{C (set)}= 10 mA, f = 2 GHz

Maximum stable power gain: MSG =16.5 dB TYP. @ V_CE= 2 V, I_C= 15 mA, f = 5.8 GHz

SiGe: C HBT technology

This product is improvement of ESD.

Flat-lead 4-pin thin-type super minimold (M04 PKG)

OUTLINE

RENESAS Package code : M04

(Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG))

1. Emitter

2. Collector

3. Emitter

4. Base

Note : Marking is "T1R."

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG7030M04

NESG7030M04-A

Flat-lead 4-pin thin-

type super minimold

(M04 PKG)

50 pcs

(Non reel)

• 8 mm wide embossed taping

• Pin 1(Emitter), Pin 2

(Collector) face the

NESG7030M04-T2

NESG7030M04-T2-A

3 kpcs/reel

15kpcs/reel

(Pb-Free)

perforation side of the tape

NESG7030M04-T2B NESG7030M04-T2B-A

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0037EJ0100 Rev.1.00

Apr 18, 2012

Page 1 of 9

12 3 4 5 6 7...11

中文翻译

下载PDF

与NESG7030M04-T2B相关器件

型号	品牌	获取价格	描述	数据表
NESG7030M04-T2B-A	RENESAS	获取价格	NPN Silicon Germanium Carbon RF Transistor
NESL064AT	NICHIA	获取价格	WARM WHITE LED
NESM005AT	NICHIA	获取价格	FULL COLOR LED
NESM026AT	NICHIA	获取价格	FULL COLOR LED
NESM054	MICROSEMI	获取价格	Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
NESM10N60	MICROSEMI	获取价格	Power Field-Effect Transistor, 10A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
NESM140	MICROSEMI	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
NESM140Z	MICROSEMI	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
NESM230	MICROSEMI	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal
NESM238AT	NICHIA	获取价格	Triple Color LED,