Datasheet > 晶体管 > 射频小信号双极晶体管> NESG4030M14-A

NESG4030M14-A

更新时间： 2024-09-24 05:54:11

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
10页	105K
描述
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NESG4030M14-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-F4	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.19	Is Samacsys：	N
最大集电极电流 (IC)：	0.035 A	基于收集器的最大容量：	0.25 pF
集电极-发射极最大电压：	3 V	配置：	SINGLE
最高频带：	C BAND	JESD-30 代码：	R-PDSO-F4
JESD-609代码：	e6	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON GERMANIUM
Base Number Matches：	1

NESG4030M14-A 数据手册

DATA SHEET

NPN SILICON GERMANIUM C RF TRANSISTOR

NESG4030M14

NPN SiGe:C RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

FEATURES

•

The device is an ideal choice for low noise, high-gain amplification

NF = 1.1 dB TYP., G^a= 11.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

Maximum stable power gain: MSG = 15 dB TYP. @ V^CE= 2 V, IC = 20 mA, f = 5.8 GHz

SiGe:C HBT technology (UHS4) adopted

•

Improvement of ESD protection

4-pin lead-less minimold (M14, 1208 PKG)

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG4030M14

NESG4030M14-A

4-pin lead-less minimold 50 pcs

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 4 (Emitter) face the

perforation side of the tape

(M14, 1208 PKG)

(Pb-Free)

(Non reel)

10 kpcs/reel

NESG4030M14-T3 NESG4030M14-T3-A

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Base Current

Symbol

Ratings

Unit

Note 1

VCBO

5.0

3.0

VCEO

Note 1

°C

Collector Current

Note 2

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

105

150

Tstg

−65 to +150

°C

Notes 1. VCBO and IB are limited by the permissible current of the protection element.

2. Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10728EJ02V0DS (2nd edition)

Date Published August 2009 NS

Printed in Japan

2008, 2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...10

中文翻译

下载PDF

与NESG4030M14-A相关器件

型号	品牌	获取价格	描述	数据表
NESG4030M14-A-YFB	NEC	获取价格	暂无描述
NESG4030M14-FB-A	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4
NESG4030M14-T3	NEC	获取价格	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (
NESG4030M14-T3-A	NEC	获取价格	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (
NESG4030M14-T3-A-FB	RENESAS	获取价格	TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
NESG4030M14-T3-FB-A	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4
NESG4030M14-T3FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG4030M14-T3-YFB-A	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4
NESG4030M14-T3YFB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN
NESG4030M14-YFB-A	RENESAS	获取价格	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, LEADLESS MINIMOLD, M14, 1208, 4

与NESG4030M14-A相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

6
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

11
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

NESG4030M14-A

NESG4030M14-A 技术参数

NESG4030M14-A 数据手册

与NESG4030M14-A相关器件

与NESG4030M14-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NESG4030M14-A

NESG4030M14-A 技术参数

NESG4030M14-A 数据手册

与NESG4030M14-A相关器件

与NESG4030M14-A相关文章

您还可以找

您在本页遇到什么问题？