NES2527B-30

更新时间： 2024-01-23 19:18:02

品牌	Logo	应用领域
日电电子 - NEC		晶体射频场效应晶体管放大器局域网
页数	文件大小	规格书
4页	40K
描述
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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中文翻译

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技术参数
数据手册

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NES2527B-30 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
外壳连接：	SOURCE	配置：	SINGLE
最小漏源击穿电压：	10 V	最大漏极电流 (ID)：	27 A
FET 技术：	METAL SEMICONDUCTOR	最高频带：	S BAND
JESD-30 代码：	R-CDFM-F2	元件数量：	1
端子数量：	2	工作模式：	DEPLETION MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

NES2527B-30 数据手册

PRELIMINARY DATA SHEET

GaAs MES FET

NES2527B-30

30 W S-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

PACKAGE DIMENSIONS (UNIT: mm)

The NES2527B-30 is power GaAs FET which

provides high output power and high gain in the 2.5 - 2.7

GHz band.

24±0.3

20.4

1.0±0.1

GATE

SOURCE

Internal input matching circuits are designed to

optimize performance. The device has a 0.8 µm gate

length for increased linear gain. To reduce thermal

resistance, the device uses PHS (Plated Heat Sink)

technology.

2.4

17.4±0.3 8.0

The device incorporates WSi (tungsten silicide) gate

for high reliability and SiO²glassivation for surface

stability.

R1.2

DRAIN

FEATURES

0.1

•

High output power

High gain

4.5 MAX

2.4

1.8

High power added efficiency

Internally matched input

High reliability

0.2 MAX

QUALITY GRADE

Standard

Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1209) published by NEC

Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

V^DS

V^GS

V^GD

I^D

−7

−18

Gate Current

I^G

180

°C

Total Power Dissipation

Channel Temperature

Storage Temperature

P^T(^*⁾

T^ch

T^stg

110

175

−65 to +175

* T^C= 25 °C

The information in this document is subject to change without notice.

Document No. P12381EJ1V0DS00 (1st edition)

Date Published February 1997 N

Printed in Japan

1997

12 3 4

中文翻译

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