| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| NES130/59 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Met |
|
| NES137 | MICROSEMI |
获取价格 |
Adjustable Negative Standard Regulator, 1.2V Min, 37V Max, BIPolar, MSFM3, TO-254Z, 3 PIN |
|
| NES1417B-30 | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Se |
|
| NES150 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me |
|
| NES1720P-140 | NEC |
获取价格 |
RF Power Field-Effect Transistor, 2-Element, L Band, Gallium Arsenide, N-Channel, Metal Se |
|
| NES1720P-140 | RENESAS |
获取价格 |
2 CHANNEL, L BAND, GaAs, N-CHANNEL, RF POWER, MESFET, T-92, 5 PIN |
|
| NES1720P-140 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 2-Element, L Band, Gallium Arsenide, N-Channel, Metal Se |
|
| NES1818-20B | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Se |
|
| NES1821B-30 | NEC |
获取价格 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
|
| NES1821B-30 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Se |
|
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