Datasheet > NE5510279A-T1-A

NE5510279A-T1-A

更新时间： 2024-09-24 21:20:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
10页	60K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN

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技术参数
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NE5510279A-T1-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	79A, 4 PIN	Reach Compliance Code：	compliant
风险等级：	5.67	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	8 V
最大漏极电流 (ID)：	1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	L BAND	JESD-30 代码：	R-XQMW-F4
湿度敏感等级：	1	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	MICROWAVE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	QUAD	处于峰值回流温度下的最长时间：	10
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

NE5510279A-T1-A 数据手册

DATA SHEET

SILICON POWER MOS FET

NE5510279A

4.8 V OPERATION SILICON RF POWER LDMOS FET

FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate

laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 33.0 dBm output power

with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage.

FEATURES

•

High output power

: P^out= 35.5 dBm TYP. (V^DS= 4.8 V, I^Dset= 300 mA, f = 900 MHz, Pⁱⁿ= 25 dBm)

: P^out= 33.0 dBm TYP. (V^DS= 4.8 V, I^Dset= 300 mA, f = 1.8 GHz, Pⁱⁿ= 25 dBm)

High power added efficiency : η^add= 65% TYP. (V^DS= 4.8 V, I^Dset= 300 mA, f = 900 MHz, Pⁱⁿ= 25 dBm)

: η^add= 47% TYP. (V^DS= 4.8 V, I^Dset= 300 mA, f = 1.8 GHz, Pⁱⁿ= 25 dBm)

High linear gain

: G^L= 16.0 dB TYP. (V^DS= 4.8 V, I^Dset= 300 mA, f = 900 MHz, Pⁱⁿ= 10 dBm)

: G^L= 10.0 dB TYP. (V^DS= 4.8 V, I^Dset= 300 mA, f = 1.8 GHz, Pⁱⁿ= 10 dBm)

: 5.7 × 5.7 × 1.1 mm MAX.

•

Surface mount package

Single supply

: V^DS= 3.0 to 8.0 V

APPLICATIONS

•

Digital cellular phones : 4.8 V GSM 1 800 class 1 handsets

Others : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications

ORDERING INFORMATION

Part Number

Package

79A

Marking

Supplying Form

• 12 mm wide embossed taping

NE5510279A-T1

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE5510279A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10121EJ03V0DS (3rd edition)

Date Published July 2003 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices 1999, 2003

12 3 4 5 6 7...10

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与NE5510279A-T1-A相关器件

型号	品牌	获取价格	描述	数据表
NE55102K+/-.25%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 102000ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel,
NE5510379A-T1	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,1.5A I(D),BEAM LEAD
NE55105K+/-1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 105000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel,
NE55107K+/-1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 107000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel,
NE55107R+/-.25%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 107ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel,
NE5510K0+/-1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel
NE55110R+/-1%	VISHAY	获取价格	Fixed Resistor, Metal Film, 0.25W, 110ohm, 250V, 1% +/-Tol, -25,25ppm/Cel,
NE5511279A	CEL	获取价格	7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NE5511279A	NEC	获取价格	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NE5511279A-A	NEC	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel

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