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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| NE55107R+/-.25% | VISHAY |
获取价格 |
Fixed Resistor, Metal Film, 0.25W, 107ohm, 250V, 0.25% +/-Tol, -25,25ppm/Cel, |
|
| NE5510K0+/-1% | VISHAY |
获取价格 |
Fixed Resistor, Metal Film, 0.25W, 10000ohm, 250V, 1% +/-Tol, -25,25ppm/Cel |
|
| NE55110R+/-1% | VISHAY |
获取价格 |
Fixed Resistor, Metal Film, 0.25W, 110ohm, 250V, 1% +/-Tol, -25,25ppm/Cel, |
|
| NE5511279A | CEL |
获取价格 |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| NE5511279A | NEC |
获取价格 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| NE5511279A-A | NEC |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel |
|
| NE5511279A-T1 | NEC |
获取价格 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| NE5511279A-T1 | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel |
|
| NE5511279A-T1A | NEC |
获取价格 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| NE5511279A-T1A | CEL |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel |
|
SK海力士量产12层HBM3E，容量高达36GB
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贸泽上架Tallysman TW5386智能GNSS天线
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