Datasheet > NDF60N550U1G

NDF60N550U1G

更新时间： 2024-09-29 01:21:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	109K
描述
N-Channel Power MOSFET

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NDF60N550U1G 数据手册

NDF60N550U1,

NDD60N550U1

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N-Channel Power MOSFET

600 V, 550 mW

Features

http://onsemi.com

• 100% Avalanche Tested

MAX

DS(ON)

(BR)DSS

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

600 V

550 mW @ 10 V

Compliant

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise

N−Channel MOSFET

D (2)

noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

NDF

NDD

Unit

DSS

600

G (1)

Continuous

Drain

Steady

State

9.5

8.5

5.4

25°C

Current

S (3)

100°C

(Note 1)

Power

Steady

State

Dissipation –

25°C

Pulsed Drain

Current

t = 10 ms

Operating Junction and Storage

Temperature

T ,

−55 to +150

9.5 8.5

°C

STG

TO−220FP

CASE 221AH

IPAK

CASE 369D

Source Current (Body Diode)

Single Pulse Drain−to−Source

Avalanche Energy

EAS

TBD

Lead Temperature for Soldering

Leads

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

DPAK

CASE 369AA

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

THERMAL RESISTANCE

Parameter

Junction−to−Case (Drain)

Symbol

Value

Unit

NDF60N550U1

NDD60N550U1

4.4

1.3

°C/W

Junction−to−Ambient Steady State

°C/W

NDF60N550U1

NDD60N550U1

NDD60N550U1−1

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Publication Order Number:

October, 2012 − Rev. P1

NDF60N550U1/D

12 3 4 5 6

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