Datasheet > NDFP03N150C

NDFP03N150C

更新时间： 2024-01-10 21:36:44

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安森美 - ONSEMI		/
页数	文件大小	规格书
5页	377K
描述
N-Channel Power MOSFET

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NDFP03N150C 数据手册

Ordering number : ENA2232

NDFP03N150C

N-Channel Power MOSFET

1500V, 2.5A, 10.5Ω, TO-220F-3FS

http://onsemi.com

Features

• On-resistance R (on)=8Ω(typ.)

• Input Capacitance Ciss=650pF(typ.)

• 10V drive

Specifications

TO-220F-3FS

Absolute Maximum Ratings at Ta = 25°C

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

1500

2.5

GSS

Drain Current (DC) Limited by Package

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

°C

Allowable Power Dissipation

Tc=25°C

150

Channel Temperature

Tch

Storage Temperature

Tstg

- 55 to +150

Avalanche Energy (Single Pulse) *¹

Avalanche Current *²

*¹V =50V, L=10mH, I =2A (Fig.1)

*²L≤10mH, Single Pulse

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta = 25°C

Ratings

Parameter

Symbol

Conditions

Unit

min

typ

max

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Cutoff Voltage

)

=10mA, V =0V

1500

BR DSS

=1200V, V =0V

DSS

GSS

(off)

=±30V, V =0V

100

=10V, I =1mA

| yfs |

(on)

Forward Transfer Admittance

Static Drain to Source On-State Resistance

Input Capacitance

=20V, I =1A

1.9

=1A, V =10V

D GS

650

10.5

Ciss

Output Capacitance

Coss

Crss

=30V, f=1MHz

Reverse Transfer Capacitance

Turn-ON Delay Time

t (on)

Rise Time

See Fig.2

Turn-OFF Delay Time

t (off)

148

Fall Time

Continued on next Page.

ORDERING INFORMATION

See detailed ordering and shipping information on page 4 of this data sheet.

Semiconductor Components Industries, LLC, 2013

November, 2013

N1313 TKIM TC-00003050 No. A2232-1/5

12 3 4 5

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