Datasheet > NDF60N360U1

NDF60N360U1

更新时间： 2024-01-13 00:22:00

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	151K
描述
N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDF60N360U1 数据手册

NDF60N360U1,

NDD60N360U1

N-Channel Power MOSFET

600 V, 360 mW

Features

http://onsemi.com

• 100% Avalanche Tested

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

DS(ON)

(BR)DSS

600 V

360 mW @ 10 V

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

NDF

NDD

Unit

DSS

600

N−Channel MOSFET

D (2)

Continuous

Drain

Steady

State

6.9

114

25°C

(Note 1)

Current

8.1

(Note 1)

G (1)

100°C

Power

Steady

State

Dissipation –

25°C

S (3)

Pulsed Drain

Current

t = 10 ms

Operating Junction and Storage

Temperature

T ,

STG

−55 to +150

°C

Source Current (Body Diode)

Single Pulse Drain−to−Source

Avalanche Energy

EAS

TO−220FP

CASE 221AH

IPAK

CASE 369D

RMS Isolation Voltage (t = 0.3 sec.,

4500

−

ISO

R.H. ≤ 30%, T = 25°C) (Figure 15)

Peak Diode Recovery (Note 2)

V/ns

dv/dt

Lead Temperature for Soldering

Leads

260

°C

DPAK

CASE 369C

IPAK

CASE 369AD

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Limited by maximum junction temperature

2. I ≤ 11 A, di/dt ≤ 400 A/ms, V

≤ V

, V = 80% V

DS peak

(BR)DSS DD (BR)DSS

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDF60N360U1

NDD60N360U1

4.1

1.1

°C/W

Junction−to−Ambient Steady State

°C/W

(Note 3)

(Note 4)

(Note 3)

NDF60N360U1

NDD60N360U1

NDD60N360U1−1

NDD60N360U1−35G

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127 in sq [2 oz] including traces)

Publication Order Number:

May, 2013 − Rev. 0

NDF60N360U1/D

12 3 4 5 6 7...9

中文翻译

下载PDF

与NDF60N360U1相关器件

型号	品牌	获取价格	描述	数据表
NDF60N360U1G	ONSEMI	获取价格	N-Channel Power MOSFET
NDF60N550U1	ONSEMI	获取价格	N-Channel Power MOSFET
NDF60N550U1G	ONSEMI	获取价格	N-Channel Power MOSFET
NDF653	DYNEX	获取价格	Fast Recovery Diode
NDF65310	DYNEX	获取价格	Fast Recovery Diode
NDF65312	DYNEX	获取价格	Fast Recovery Diode
NDF65314	DYNEX	获取价格	Fast Recovery Diode
NDF65316	DYNEX	获取价格	Fast Recovery Diode
NDF7000A	NSC	获取价格	N-Channel Enhancement Mode Field Effect Transistor
NDF7000A	TI	获取价格	400mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92