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NCR169DG

更新时间： 2024-02-21 23:38:41
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
8页 70K
描述
General Purpose Sensitive Gate Silicon Controlled Rectifier

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NCR169DG 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：TO-92包装说明：LEAD FREE, PLASTIC, CASE 029-11, TO-226AA, 3 PIN
针数：3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.69
Is Samacsys：N配置：SINGLE
最大直流栅极触发电流：0.2 mAJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大均方根通态电流：0.8 A
断态重复峰值电压：400 V重复峰值反向电压：400 V
表面贴装：NO端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：THROUGH-HOLE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

NCR169DG 数据手册

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NCR169D  
General Purpose  
Sensitive Gate  
Silicon Controlled Rectifier  
Reverse Blocking Thyristor  
http://onsemi.com  
PNPN device designed for line-powered general purpose  
applications such as relay and lamp drivers, small motor controls, gate  
drivers for larger thyristors, and sensing and detection circuits.  
Supplied in a cost effective plastic TO-226AA package.  
SCR  
0.8 AMPERES RMS  
400 VOLTS  
Features  
• Sensitive Gate Allows Direct Triggering by Microcontrollers and  
Other Logic Circuits  
G
• On−State Current Rating of 0.8 Amperes RMS at 80°C  
A
K
• Surge Current Capability − 10 Amperes  
• Immunity to dV/dt − 20 V/μsec Minimum at 110°C  
• Glass-Passivated Surface for Reliability and Uniformity  
• Device Marking: NCR169D, Date Code  
• Pb−Free Packages are Available  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
NCR  
169D  
ALYWWG  
G
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1.)  
V
DRM,  
400  
Volts  
(T = *40 to 110°C, Sine Wave, 50 to  
V
RRM  
J
K
60 Hz; Gate Open)  
G
A
On-State RMS Current  
I
0.8  
10  
Amp  
T(RMS)  
(T = 80°C) 180° Conduction Angles  
C
TO−92  
(TO−226AA)  
CASE 029  
STYLE 10  
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz,  
I
Amps  
TSM  
T = 25°C)  
J
2
2
Circuit Fusing Consideration (t = 10 ms)  
I t  
0.415  
0.1  
A s  
1
2
3
Forward Peak Gate Power  
P
Watt  
Watt  
Amp  
Volts  
°C  
GM  
(T = 25°C, Pulse Width v 1.0 μs)  
A
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
Forward Average Gate Power  
(T = 25°C, t = 20 ms)  
A
P
0.10  
1.0  
G(AV)  
WW = Work Week  
Forward Peak Gate Current  
I
GM  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
(T = 25°C, Pulse Width v 1.0 μs)  
A
Reverse Peak Gate Voltage  
V
5.0  
GRM  
(T = 25°C, Pulse Width v 1.0 μs)  
A
PIN ASSIGNMENT  
Cathode  
1
2
3
Operating Junction Temperature Range  
T
J
−40 to  
110  
@ Rate V  
and V  
RRM  
DRM  
Gate  
Storage Temperature Range  
T
stg  
−40 to  
150  
°C  
Anode  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
October, 2005 − Rev. 1  
NCR169D/D  
 
12345678

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