Datasheet > NCP439_16

NCP439_16

更新时间： 2024-10-03 01:14:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	107K
描述
2A Very Low Ron Switches at Low Vin Voltage

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NCP439_16 数据手册

NCP439

2A Very Low Ron Switches

at Low Vin Voltage

The NCP439 is a very low Ron MOSFET controlled by external

logic pin, allowing optimization of battery life, and portable device

autonomy.

www.onsemi.com

This load switch is a best in class in term of R

optimization at

DS(on)

low V voltage.

MARKING

DIAGRAM

Due to a current consumption optimization with PMOS structure,

leakage currents are eliminated by isolating connected IC’s on the

battery when not used.

AYW

Output discharge path is also embedded to eliminate residual

voltages on the output.

Proposed in wide input voltage range from 1.0 V to 3.6 V, and a very

small 0.96 x 0.96 mm WLCSP4, 0.5 mm pitch.

WLCSP4

CASE 567FG

= Specific Device Code

= Assembly Location

= Year

Features

= Wafer Lot

• 1 V – 3.6 V Operating Range

• 37 mW P MOSFET at 1.8 V

• DC Current Up to 2 A

• Output Auto−Discharge

• Active High EN Pin

PIN DIAGRAM

• WLCSP4 0.96 x 0.96 mm

• This is a Pb−Free Device

OUT

Typical Applications

• Mobile Phones

• Tablets

• Digital Cameras

• GPS

• Portable Devices

GND

(Top View)

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

DCDC Converter

LDO

IC’n

OUT

EN GND

ENx

Figure 1. Typical Application Circuit

Publication Order Number:

August, 2016 − Rev. 1

NCP439/D

12 3 4 5 6 7...9

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