NCP1252
Table 3. ELECTRICAL CHARATERISTICS
(V = 15 V, R = 43 kW, C
= 1 nF. For typical values T = 25°C, for min/max values T = –25°C to +125°C, unless otherwise noted)
CC
T
DRV
J
J
Characteristics
Test Condition
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION AND V MANAGEMENT
CC
Startup threshold at which driving pulses
are authorized
V
increasing
V
V
CC
CC(on)
CC(off)
A, B, C versions
D & E versions
9.4
13.1
10
14
10.6
14.9
Minimum Operating voltage at which driving pulses
are stopped
V
CC
decreasing
V
8.4
9
9.6
V
V
Hysteresis between V
and V
A, B and C versions
D & E versions
V
CC(HYS)
0.9
4.5
1.0
5.0
−
−
CC(on)
CC(min)
Start−up current, controller disabled
V
CC
< V
& V increasing
from zero
I
−
−
100
mA
CC(on)
CC
CC1
Internal IC consumption, controller switching
Internal IC consumption, controller switching
CURRENT COMPARATOR
F
=100 kHz, DRV = open
I
I
0.5
2.0
1.4
2.7
2.2
3.5
mA
mA
sw
CC2
F
sw
=100 kHz, C
= 1 nF
DRV
CC3
Current Sense Voltage Threshold
Leading Edge Blanking Duration
Input Bias Current
V
0.92
−
1
1.08
−
V
ILIM
t
160
0.02
70
ns
mA
ns
LEB
(Note 3)
I
−
−
bias
ILIM
Propagation delay
From CS detected to gate
turned off
t
−
150
Internal Ramp Compensation Voltage level
Internal Ramp Compensation resistance to CS pin
INTERNAL OSCILLATOR
@ 25°C (Note 4)
@ 25°C (Note 4)
V
3.15
−
3.5
3.85
−
V
ramp
R
26.5
kW
ramp
Oscillator Frequency
R = 43 kW & DRV pin = 47 kW
f
f
92
425
−
100
500
5
108
550
−
kHz
kHz
%
T
OSC
Oscillator Frequency
R = 8.5 kW & DRV pin = 47 kW
T
OSC
Frequency Modulation in percentage of f
(Note 3)
(Note 3)
(Note 3)
f
jitter
OSC
Frequency modulation Period
T
swing
−
3.33
−
−
ms
kHz
%
Maximum operating frequency
Maximum duty−cycle – A version
Maximum duty−cycle – B version
Maximum duty−cycle – C version
Maximum duty−cycle – D & E versions
FEEDBACK SECTION
f
500
45.6
76
−
MAX
DC
48
49.6
84
maxA
maxB
maxC
maxD
DC
80
%
DC
DC
61
65
69
%
44.2
45.6
47.2
%
Internal voltage division from FB to CS setpoint
Internal pull−up resistor
FB
−
−
3
3.5
−
−
−
−
−
−
−
−
kW
mA
kW
V
div
R
pull−up
FB pin maximum current
FB pin = GND
I
FB
1.5
−
Internal feedback impedance from FB to GND
Open loop feedback voltage
Internal Diode forward voltage
DRIVE OUTPUT
Z
FB
40
FB pin = open
(Note 3)
V
FBOL
−
6.0
0.75
V
−
V
f
DRV Source resistance
R
−
−
−
10
6
30
19
−
W
W
SRC
DRV Sink resistance
R
SINK
Output voltage rise−time
V
CC
= 15 V, C
= 1 nF,
t
r
26
ns
DRV
10 to 90%
3. Guaranteed by design
4. V
, R
Guaranteed by design
ramp
ramp
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