Datasheet > NBT-168-T3

NBT-168-T3

更新时间： 2024-11-18 23:53:23

品牌	Logo	应用领域
其他 - ETC		射频微波高功率电源
页数	文件大小	规格书
6页	100K
描述
Amplifier. Other

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NBT-168-T3 数据手册

NBT-168

MICROWAVE GaInP/GaAs DISCRETE HBT

DC TO 12GHz

Typical Applications

• Active Amplifier in VCO Circuit

• Buffer Amplifier

• Gain Stage

Product Description

The NBT-168 discrete HBT is ideal for low-cost amplifier

and oscillator applications up to 12GHz. Low noise figure,

high gain, high current capability, and medium output give

this device high dynamic range and excellent linearity for

cascaded amplifier designs. This device is also ideally

suited for VCO/buffer amplifier applications. The NBT-168

is packaged in a low-cost, surface-mount ceramic pack-

age, providing ease of assembly for high-volume tape-

and-reel requirements. It is available in either packaged

or chip (NBT-168-D) form, where its gold metallization is

ideal for hybrid circuit designs.

2.94 min

3.28 max

0.025 min

0.125 max

0.50 nom

1.00 min

1.50 max

Pin 1

Indicator

Pin 1

Indicator

RF OUT

Ground

RF OUT

Lid ID

1.70 min

1.91 max

0.98 min

1.02 max

0.38 nom

2.39 min

2.59 max

0.37 min

0.63 max

All Dimensions in Millimeters

Notes:

1. Solder pads are coplanar to within ±0.025 mm.

2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.

3. Mark to include two characters and dot to reference pin 1.

Optimum Technology Matching® Applied

Package Style: MPGA, Bowtie, 3x3, Ceramic

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

GaInP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Reliable, Low-Cost HBT Design

• 26.0dB Gain@1.0GHz

• Positive Power Supply Operation

• 4-Finger Device for High-Current

Capability

Pin 1

Indicator

RF OUT

Ground

RF IN

• Low Noise Figure, 1.7dB@2.0GHz

Ordering Information

NBT-168

Microwave GaInP/GaAs Discrete HBT DC to 12GHz

NBT-168-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)

NBT-168-D

NBT-168-E

NBT-168 Chip Form

Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A1 020412

4-1

12 3 4 5 6

中文翻译

下载PDF

与NBT-168-T3相关器件

型号	品牌	获取价格	描述	数据表
NBTC75BNN5	NEUTRIK	获取价格	The rearTWIST HD Tiny BNC cable connector is optimized for small cable diameters.
NBTC75BSS5	NEUTRIK	获取价格	The rearTWIST HD Tiny BNC cable connector is optimized for small cable diameters.
NBVSBA011LN1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA011LU1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA015LN1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA015LU1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA017LN1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA017LU1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA018LN1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series
NBVSBA018LU1TAG	ONSEMI	获取价格	2.5 V/3.3 V, LVPECL Voltage-Controlled Crystal Oscillator (VCXO) PureEdge Product Series

与NBT-168-T3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

44

产品中心

服务支持

精选活动

关于我们

帮助中心

NBT-168-T3

NBT-168-T3 数据手册

与NBT-168-T3相关器件

与NBT-168-T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NBT-168-T3

NBT-168-T3 数据手册

与NBT-168-T3相关器件

与NBT-168-T3相关文章

您还可以找

您在本页遇到什么问题？