Datasheet > NAND98R3M2BZBB5E

NAND98R3M2BZBB5E

更新时间： 2024-01-30 07:03:24

品牌	Logo	应用领域
恒忆 - NUMONYX		动态存储器内存集成电路
页数	文件大小	规格书
33页	724K
描述
Memory Circuit, Flash+SDRAM, PBGA107

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NAND98R3M2BZBB5E 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	FBGA, BGA107,10X14,32	针数：	107
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.84	JESD-30 代码：	R-PBGA-B107
内存集成电路类型：	MEMORY CIRCUIT	混合内存类型：	FLASH+SDRAM
端子数量：	107	最高工作温度：	85 °C
最低工作温度：	-30 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA107,10X14,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	1.8 V
认证状态：	Not Qualified	子类别：	Other Memory ICs
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
温度等级：	OTHER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

NAND98R3M2BZBB5E 数据手册

Description

NANDxxxxMx

Description

The NANDxxxxMx devices (see Table 1: Device summary for the list of devices) combine

two memory devices in a multichip package:

256-Mbit, 512-Mbit, or 1-Gbit SLC small page NAND flash memory, and either:

256-Mbit or 512-Mbit SDR (single data rate) LPSDRAM or

256-Mbit or 512-Mbit DDR (double data rate) LPSDRAM

The NAND flash memory and LPSDRAM components have separate power supplies and

grounds. They also have separate control, address and input/output signals; this allows

simultaneous access to both devices at any moment. The NAND flash memory and

LPSDRAM components are distinguished by a Chip Enable input, E , for the NAND flash

memory and a Chip Select, E , for the LPSDRAM. See Figure 1 and Figure 2 in conjunction

with Table 4 and Table 5 for an overview of the signals associated with each component.

The NANDxxxxMx devices are available with a 1.8 V or 2.6 V voltage supply and are offered

in the following packages as shown in Table 2: Product list:

TFBGA107 (10.5 × 13 × 1.2 mm)

TFBGA149 (10 × 13.5 × 1.2 mm)

TFBGA137 (10.5 × 13 × 1.2 mm)

TFBGA152 (14 × 14 × 1.1 mm)

The memories are supplied with all the NAND flash memory bits erased (set to ‘1’).

This datasheet should be read in conjunction with the SLC small page NAND flash memory

and LPSDRAM datasheets.

Table 2.

Product list

Root part number

NAND product

LPSDRAM product

Package

NAND88R3M0

NAND99R3M0

256 Mbits (×8) - 1.8 V SDR 256 Mbits (×16) 1.8 V, 133 MHz TFBGA107

512 Mbits (×8) - 1.8 V SDR 512 Mbits (×16) 1.8 V, 133 MHz TFBGA149

TFBGA107

NAND98R3M0

512 Mbits (×8) - 1.8 V SDR 256 Mbits (×16) 1.8 V, 133 MHz TFBGA149

TFBGA152

NAND99W3M1 512 Mbits (×8) - 2.6 V SDR 512 Mbits (×32) 1.8 V, 133 MHz TFBGA137

NAND99R3M1 512 Mbits (×8) - 1.8 V SDR 512 Mbits (×32) 1.8 V, 133 MHz LFBGA137

NAND99W3M0 512 Mbits (×8) - 2.6 V SDR 512 Mbits (×16) 1.8 V, 133 MHz TFBGA107

NAND98W3M0 512 Mbits (×8) - 2.6 V SDR 256 Mbits (×16) 1.8 V, 133 MHz TFBGA107

NANDA9W3M1 1 Gbit (x8) - 2.6 V

SDR 512 Mbits (x32) 1.8 V, 133 MHz TFBGA 137

NAND99R4M2

NAND99R3M2

512 Mbits (x16) - 1.8 V DDR 512 Mbits (x16) 1.8 V, 133 MHz TFBGA 149

512 Mbits (×8) - 1.8 V DDR 512 Mbits (x16) 1.8 V, 133 MHz TFBGA107

NAND98W3M1 512 Mbits (×8) - 2.6 V SDR 256 Mbits (x32) 1.8 V, 133 MHz TFBGA 137

NAND98R3M1 512 Mbits (×8) - 1.8 V SDR 256 Mbits (x32) 1.8 V, 133 MHz TFBGA 137

6/32

1...3 4 567 8 9...33

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与NAND98R3M2BZBB5E相关器件

型号	品牌	描述	获取价格	数据表
NAND98R3M2BZBB5F	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NAND98R4M2AZBA5E	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NAND98R4M2AZBA5F	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NAND98R4M2BZBA5E	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NAND98R4M2BZBA5F	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS C	获取价格
NAND98W3M0BZBB5F	NUMONYX	Memory Circuit, Flash+SDRAM, PBGA107,	获取价格

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