NANDxxxxMx
256/512-Mbit or 1-Gbit (x8/x16, 1.8/2.6 V, 528-byte page) NAND
flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP
Features
FBGA
n
Packages
– MCP (multichip package)
– PoP (package on package)
TFBGA107 10.5 × 13 × 1.2 mm (ZBB)
TFBGA149 10 × 13.5 × 1.2 mm (ZBA)
TFBGA137 10.5 × 13 × 1.2 mm (ZBC)
LFBGA137 10.5 × 13 × 1.4 mm (ZBC)
n
Device composition
– 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
SLC small page NAND flash memory
– 1 die of 256 or 512 Mbits (x16 or x32)
SDR/DDR LPSDRAM
FBGA
n
Supply voltages
– V
– V
= 1.7 V to 1.95 V or 2.5 V to 3.6 V
DDF
DDD
TFBGA152 14 x 14 x 1.1 mm (ZPA)
= V
= 1.7 V to 1.95 V
DDQD
n
n
n
Electronic signature
n
Data integrity
®
– 100 000 program/erase cycles
– 10 years data retention
ECOPACK packages
Temperature range: –30 to 85 °C
Single or double data rate LPSDRAM
Flash memory
n
n
n
n
n
n
Interface: ×16 or ×32 bus width
Deep power-down mode
n
n
n
n
NAND interface
– x8/x16 bus width
– Multiplexed address/data
1.8 V LVCMOS interface
Page size
Quad internal banks controlled by BA0, BA1
Automatic and controlled precharge
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
Auto refresh and self refresh
Block size
– 8 192 refresh cycles/64 ms
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
– Programmable partial array self refresh
– Auto temperature compensated self refresh
Page read/program
n
n
Wrap sequence: sequential/interleave
– Random access: 12 µs (3 V), 15 µs (1.8 V)
Burst termination by Burst Stop command and
Precharge command
– Sequential access: 30 ns (3 V), 50 ns
(1.8 V)
– Page program time: 200 µs (typ)
Table 1.
Device summary
NAND88R3M0 NAND99W3M0 NAND98R4M2
NAND98R3M0 NAND99W3M1 NAND99R3M1
NAND98W3M0 NANDA9W3M1
n
n
Copy back program mode
– Fast page copy without external buffering
Fast block erase
NAND99R3M0 NAND99R4M2
– Block erase time: 2 ms (typ)
– Status register
NAND99R3M2 NAND98W3M1
NAND98R3M1 NAND98R3M2
October 2008
Rev 13
1/32
www.numonyx.com
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