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NAND98R3M2BZBB5E PDF预览

NAND98R3M2BZBB5E

更新时间: 2024-01-16 17:25:13
品牌 Logo 应用领域
恒忆 - NUMONYX 动态存储器内存集成电路
页数 文件大小 规格书
33页 724K
描述
Memory Circuit, Flash+SDRAM, PBGA107

NAND98R3M2BZBB5E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:BGA
包装说明:FBGA, BGA107,10X14,32针数:107
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.84JESD-30 代码:R-PBGA-B107
内存集成电路类型:MEMORY CIRCUIT混合内存类型:FLASH+SDRAM
端子数量:107最高工作温度:85 °C
最低工作温度:-30 °C封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA107,10X14,32
封装形状:RECTANGULAR封装形式:GRID ARRAY
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified子类别:Other Memory ICs
标称供电电压 (Vsup):1.8 V表面贴装:YES
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NAND98R3M2BZBB5E 数据手册

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