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NAND512R4A2CZA6F PDF预览

NAND512R4A2CZA6F

更新时间: 2024-02-20 15:20:28
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储
页数 文件大小 规格书
51页 1272K
描述
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

NAND512R4A2CZA6F 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63针数:63
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.55
Is Samacsys:N最长访问时间:15000 ns
JESD-30 代码:R-PBGA-B63长度:11 mm
内存密度:536870912 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:63字数:33554432 words
字数代码:32000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.05 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
类型:NAND TYPE宽度:9 mm
Base Number Matches:1

NAND512R4A2CZA6F 数据手册

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NAND512R3A2C NAND512R4A2C  
NAND512W3A2C NAND512W4A2C  
512 Mbit, 528 byte/264 word page,  
1.8 V/3 V, NAND Flash memories  
Features  
High density NAND Flash memories  
512 Mbit memory array  
Cost effective solutions for mass  
storage applications  
NAND interface  
x 8 or x 16 bus width  
Multiplexed Address/ Data  
TSOP48 12 x 20 mm  
Supply voltage: 1.8 V, 3.0 V  
Page size  
FBGA  
x 8 device: (512 + 16 spare) bytes  
x 16 device: (256 + 8 spare) words  
VFBGA55 8 x 10 x 1 mm  
VFBGA63 9 x 11 x 1 mm  
Block size  
x 8 device: (16 K + 512 spare) bytes  
x 16 device: (8 K + 256 spare) words  
Hardware Data Protection  
Page Read/Program  
Program/Erase locked during Power  
transitions  
Random access:  
12 µs (3 V)/15 µs (1.8 V) (max)  
Data integrity  
Sequential access:  
30 ns (3 V)/50 ns (1.8 V) (min)  
100,000 Program/Erase cycles (with  
ECC)  
Page Program time: 200 µs (typ)  
10 years Data Retention  
®
Copy Back Program mode  
Fast Block Erase: 2 ms (typ)  
Status Register  
ECOPACK packages  
Development tools  
Error Correction Code models  
Electronic signature  
Bad Blocks Management and Wear  
Leveling algorithms  
Chip Enable ‘don’t care’  
Serial Number option  
Hardware simulation models  
Table 1.  
Device summary  
Reference  
Part number  
NAND512R3A2C  
NAND512R4A2C(1)  
NAND512W3A2C  
NAND512W4A2C(1)  
NAND512-A2C  
1. x16 organization only available for MCP.  
January 2008  
Rev 2  
1/51  
www.numonyx.com  
1

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NAND512R4A2CZA6T STMICROELECTRONICS

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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R4A2CZB1F STMICROELECTRONICS

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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
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NAND512R4A2CZB6 STMICROELECTRONICS

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128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R4A2CZB6E STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R4A2CZB6F STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R4A2CZB6T STMICROELECTRONICS

获取价格

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash
NAND512R4A2DZA6E NUMONYX

获取价格

Flash, 32MX16, 15000ns, PBGA63, 8.50 X 15 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT,