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N850CH34HOO PDF预览

N850CH34HOO

更新时间: 2024-01-02 04:12:01
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
3页 425K
描述
Silicon Controlled Rectifier, 3799.4A I(T)RMS, 4900000mA I(T), 3400V V(DRM), 3400V V(RRM), 1 Element

N850CH34HOO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE关态电压最小值的临界上升速率:400 V/us
最大直流栅极触发电流:300 mA最大直流栅极触发电压:3 V
最大维持电流:1000 mAJESD-30 代码:O-CEDB-N2
最大漏电流:200 mA通态非重复峰值电流:30000 A
元件数量:1端子数量:2
最大通态电流:4900000 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:3799.4 A
重复峰值关态漏电流最大值:200000 µA断态重复峰值电压:3400 V
重复峰值反向电压:3400 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

N850CH34HOO 数据手册

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