Datasheet > N0800S

N0800S

更新时间： 2022-03-21 03:28:57

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
5页	84K
描述
NPN SILICON EPITAXIAL TRANSISTOR

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数据手册

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N0800S 数据手册

N0800S

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

GAIN BANDWIDTH PRODUCT vs.

COLLECTOR CURRENT

0.1

1000

100

CE = 6 V

Pulsed

CE = 6 V

= 125˚C

25˚C

−25˚C

0.01

0.001

100

1000

- Collector Current - (mA)

0.0001

0.0

0.3

0.6

0.9

1.2

VBE - Base to Emitter Voltage - (V)

OUTPUT CAPACITANCE vs.

SWITCHING TIME vs.

COLLECTOR TO BASE VOLTAGE

COLLECTOR CURRENT

100

1000

100

= 0

stg

f = 1.0 MHz

CE = 10 V

= 10IB1 = −10IB2

= 50 μs

0.1

100

- Collector Current - (mA)

1000

VCB - Collector to Base Voltage - (V)

R07DS0727EJ0100 Rev.1.00

Mar 30, 2012

Page 3 of 5

1 234 5

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