Datasheet > N04Q1625C2BB2-70I

N04Q1625C2BB2-70I

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
13页	300K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

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N04Q16yyC2B

NanoAmp Solutions, Inc.

Ordering Information

Advance Information

N04Q16 XX C2B X - XX X

C = 0^oC - 70^oC

I = -40^oC - 85^oC

Temperature

70 = 70ns

Performance

15 = 150ns

T = 44-pin TSOP II

Package Type

T2 = 44-pin TSOP II Green (RoHS Compliant)

B = 48-ball BGA

B2 = 48-ball BGA Green (RoHS Compliant)

W = Wafer (KGD)

12 = 1.2V

18 = 1.8V

25 = 2.5V

30 = 3.0V

Operating Voltage

Q = Low Power SRAM with VccQ for dual rail operation

Revision History

Revision

Date

Change Description

October 2005

Initial Advanced Release

Raised maximum Vcc to 3.6V for 3V device

February 2006

Added green packages

Changed dual rail to ‘Q’ part designator

NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.

NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-

poses only and they vary depending upon specific applications.

NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application

or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp

product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Stock No. 23451-B 2/06

The specification is ADVANCE INFORMATION and subject to change without notice.

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