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N02L83W2AN5IT PDF预览

N02L83W2AN5IT

更新时间: 2024-02-14 11:05:41
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器
页数 文件大小 规格书
10页 170K
描述
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit

N02L83W2AN5IT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:STSOP1-32
针数:32Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
长度:11.8 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.56,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.25 mm
最大待机电流:0.00001 A最小待机电流:1.8 V
子类别:SRAMs最大压摆率:0.016 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mm

N02L83W2AN5IT 数据手册

 浏览型号N02L83W2AN5IT的Datasheet PDF文件第1页浏览型号N02L83W2AN5IT的Datasheet PDF文件第2页浏览型号N02L83W2AN5IT的Datasheet PDF文件第3页浏览型号N02L83W2AN5IT的Datasheet PDF文件第5页浏览型号N02L83W2AN5IT的Datasheet PDF文件第6页浏览型号N02L83W2AN5IT的Datasheet PDF文件第7页 
N02L83W2A  
Power Savings with Page Mode Operation (WE = V )  
IH  
Page Address (A4 - A17)  
Word Address (A0 - A3)  
Open page  
...  
Word 16  
Word 1  
Word 2  
CE1  
CE2  
OE  
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal  
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power  
saving feature.  
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open  
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant  
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is  
considerably lower than standard operating currents for low power SRAMs.  
Rev. 8 | Page 4 of 10 | www.onsemi.com  

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