Datasheet > N02L163WC2AB2-55I

N02L163WC2AB2-55I

更新时间： 2024-02-02 07:55:48

品牌	Logo	应用领域
AMI		静态存储器内存集成电路
页数	文件大小	规格书
11页	185K
描述
Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, GREEN, BGA-48

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N02L163WC2AB2-55I 技术参数

AMI Semiconductor, Inc.

Power Savings with Page Mode Operation (WE = V )

N02L163WC2A

Page Address (A4 - A16)

Word Address (A0 - A3)

Open page

...

Word 16

Word 1

Word 2

CE1

CE2

LB, UB

Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal

organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power

saving feature.

The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open

and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant

bits and addressing the 16 words within the open page, power is reduced to the page mode value which is

considerably lower than standard operating currents for low power SRAMs.

(DOC# 14-02-013 REV H ECN# 01-1270)

The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

1 2 3 456 7 8...11

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型号	品牌	描述	获取价格	数据表
N02L163WC2AB2-70I	AMI	128KX16 STANDARD SRAM, 70ns, PBGA48, GREEN, BGA-48	获取价格
N02L163WC2AB2-70I	NANOAMP	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48	获取价格
N02L163WC2AB-55I	AMI	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, BGA-48	获取价格
N02L163WC2AB-70I	NANOAMP	Standard SRAM, 128KX16, 70ns, CMOS, PBGA48	获取价格
N02L163WC2AT	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 12	获取价格
N02L163WC2AT2	NANOAMP	2Mb Ultra-Low Power Asynchronous CMOS SRAM 12	获取价格