Datasheet > MXSMCG36ATR

MXSMCG36ATR

更新时间： 2024-11-20 11:01:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		电视
页数	文件大小	规格书
4页	186K
描述
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC, SMCG, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MXSMCG36ATR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

SURFACE MOUNT 1500 Watt

Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

MSMCJ5.0A thru MSMCJ170CA, e3

and MSMCG5.0A thru MSMCG170CA, e3

FEATURES

High reliability controlled devices with fabrication and assembly lot traceability

100 % surge tested devices

Optional upscreening available by replacing the M prefix with MA, MX or MXL prefixes.

These prefixes specify various screening and conformance inspection options based on

MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.

Axial-lead equivalent packages for thru-hole mounting available as 1.5KE6.8A to

1.5KE200CA or 1N6267 thru 1N6303A and 1N5908 (consult factory for other surface mount

options).

Refer to table below

for dimensions

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Protection from switching transients and induced RF

Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightening protection per IEC 61000-4-5 with 42 Ohms source impedance:

Class 1: MSMC5.0A to MSMC170CA

Class 2: MSMC5.0A to MSMC150CA

Class 3: MSMC5.0A to MSMC75CA

Class 4: MSMC5.0A to MSMC36CA

Secondary lightening protection per IEC 61000-4-5 with 12 Ohms source impedance:

Class 1: MSMC5.0A to MSMC90CA

Class 2: MSMC5.0A to MSMC45CA

Class 3: MSMC5.0A to MSMC24CA

Class 4: MSMC5.0A to MSMC11CA

Secondary lightening protection per IEC 61000-4-5 with 2 Ohms source impedance:

Class 2: MSMC5.0A to MSMC22CA

Class 3: MSMC5.0A to MSMC10CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and

3) with impulse repetition rate (duty factor) of 0.01 % or less

tclamping (0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and <5 ns for bidirectional

Operating and Storage temperature: -65 ºC to +150 ºC

Thermal resistance: 20 ºC/W junction to lead, or 80 ºC/W junction to ambient when mounted

on FR4 PC board (1oz Cu) with recommended footprint (see page 2)

Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when

mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25 ºC (unidirectional

only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01001 Rev B, Sept 2011

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

下载PDF

与MXSMCG36ATR相关器件

型号	品牌	获取价格	描述	数据表
MXSMCG36CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MXSMCG36CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MXSMCG36CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MXSMCG36CATR	MICROSEMI	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC, SMCG, 2 PIN
MXSMCG36CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MXSMCG36CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MXSMCG36CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MXSMCG36E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXSMCG36E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXSMCG36TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与MXSMCG36ATR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

22
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

14
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

44
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

43

产品中心

服务支持

精选活动

关于我们

帮助中心

MXSMCG36ATR

MXSMCG36ATR 数据手册

与MXSMCG36ATR相关器件

与MXSMCG36ATR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXSMCG36ATR

MXSMCG36ATR 数据手册

与MXSMCG36ATR相关器件

与MXSMCG36ATR相关文章

您还可以找

您在本页遇到什么问题？