5秒后页面跳转
MXSMBGP6KE36CTR PDF预览

MXSMBGP6KE36CTR

更新时间: 2024-11-19 21:01:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 560K
描述
Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN

MXSMBGP6KE36CTR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-215AA
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.64
最大击穿电压:39.6 V最小击穿电压:32.4 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-215AA
JESD-30 代码:R-PDSO-G2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
极性:BIDIRECTIONAL最大功率耗散:1.38 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:29.1 V表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:20Base Number Matches:1

MXSMBGP6KE36CTR 数据手册

 浏览型号MXSMBGP6KE36CTR的Datasheet PDF文件第2页浏览型号MXSMBGP6KE36CTR的Datasheet PDF文件第3页浏览型号MXSMBGP6KE36CTR的Datasheet PDF文件第4页 
SMBJP6KE6.8 thru SMBJP6KE200CA and  
SMBGP6KE6.8 thru SMBGP6KE200CA  
600 Watt TRANSIENT VOLTAGE  
SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This SMBJP6KE and SMBGP6KE series is an economical surface mount  
version of the popular P6KE axial-leaded series of 600 W Transient Voltage  
Suppressors (TVSs). It is available in both unidirectional and bi-directional  
configurations for protecting voltage-sensitive components from destruction  
or degradation. Response time of clamping action is virtually instantaneous.  
As a result, they may also be used effectively for protection from ESD or EFT  
per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments  
and induced RF. They can also be used for protecting other sensitive  
components from secondary lightning effects per IEC61000-4-5 and class  
levels defined herein. Microsemi also offers numerous other TVS products to  
NOTE: All SMB series are  
equivalent to prior SMS package  
identifications.  
meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Economical TVS series for surface mount  
Available in both unidirectional and bidirectional  
(add C or CA suffix to part number for bidirectional)  
Suppresses transients up to 600 watts @ 10/1000  
µs (see Figure 1)  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Selections for 6.8 to 200 volts breakdown (VBR  
Fast response  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers.  
)
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: SMBJ(G)P6KE6.8 to 130A or CA  
Class 2: SMBJ(G)P6KE6.8 to 68A or CA  
Class 3: SMBJ(G)P6KE6.8 to 36A or CA  
Class 4: SMBJ(G)P6KE6.8 to 18A or CA  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
Axial-lead (thru-hole) equivalents available as P6KE6.8  
Class 1: SMBJ(G)P6KE6.8 to 43A or CA  
Class 2: SMBJ(G)P6KE6.8 to 22A or CA  
to P6KE200CA (consult factory for other options)  
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Peak Pulse Power dissipation at 25oC: 600 watts at  
CASE: Void-free transfer molded thermosetting  
10/1000 µs (also see Fig 1,2, and 3).  
epoxy body meeting UL94V-0  
Impulse repetition rate (duty factor): 0.01%  
FINISH: Tin-Lead plated over copper and readily  
solderable per MIL-STD-750, method 2026  
MARKING: Body marked without SMBJ or SMBG  
part number prefix, e.g. P6KE6.8A, P6KE36,  
P6KE200CA, etc.  
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65oC to +150oC  
Thermal resistance: 25 ºC/W junction to lead, or 90ºC/W  
junction to ambient when mounted on FR4 PC board  
(1oz Cu) with recommended footprint (see last page)  
POLARITY: Band denotes cathode. Bidirectional  
not marked  
Steady-State Power dissipation: 5 watts at TL = 25oC,  
or 1.38 watts at TA = 25ºC when mounted on FR4 PC  
board with recommended footprint  
WEIGHT: 0.1 grams (approximate)  
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per  
13 inch reel (add “TR” suffix to part number)  
Forward Voltage at 25oC: 3.5 Volts maximum @ 50  
Amp peak impulse of 8.3 ms half-sine wave  
(unidirectional only)  
See package dimensions on last page  
Solder temperatures: 260oC for 10 s (maximum)  
Copyright 2004  
6-16-2004 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与MXSMBGP6KE36CTR相关器件

型号 品牌 获取价格 描述 数据表
MXSMBGP6KE36E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBGP6KE36TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBGP6KE39A MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBGP6KE39ATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBGP6KE39CA MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXSMBGP6KE39CAE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXSMBGP6KE39CATR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MXSMBGP6KE39E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 31.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBGP6KE39TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 31.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXSMBGP6KE43 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 34.8V V(RWM), Unidirectional, 1 Element, Silicon, DO