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MX30UF4G18AC PDF预览

MX30UF4G18AC

更新时间: 2024-04-09 18:59:36
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
85页 1141K
描述
SLC NAND Flash

MX30UF4G18AC 数据手册

 浏览型号MX30UF4G18AC的Datasheet PDF文件第4页浏览型号MX30UF4G18AC的Datasheet PDF文件第5页浏览型号MX30UF4G18AC的Datasheet PDF文件第6页浏览型号MX30UF4G18AC的Datasheet PDF文件第8页浏览型号MX30UF4G18AC的Datasheet PDF文件第9页浏览型号MX30UF4G18AC的Datasheet PDF文件第10页 
MX30UF4G16AC  
MX30UF4G18AC  
2. GENERAL DESCRIPTIONS  
The MX30UF4G16(18)AC is a 4Gb SLC NAND Flash memory device. Its standard NAND Flash features  
and reliable quality of typical P/E cycles 100K (with ECC), which make it most suitable for embedded system  
code and data storage.  
The product family requires 4-bit ECC per 528B.  
This device is typically accessed in pages of 2,112 bytes (x8) or 1,056 words (x16), both for read and for  
program operations.  
The device's array is organized as thousands of blocks, which is composed by 64 pages of (1024+32) words  
in two NAND strings structure with 32 serial connected cells in each string. Each page has an additional 32  
words for ECC and other purposes. The device has an on-chip buffer of 2,112 bytes or 1,056 words (x16) for  
data load and access.  
The Cache Read Operation of the MX30UF4G16(18)AC enables first-byte read-access latency of 25us and  
sequential read of 25ns and the latency time of next sequential page will be shorten from tR to tRCBSY.  
The MX30UF4G16(18)AC power consumption is 30mA during all modes of operations (Read/Program/  
Erase), and 50uA in standby mode.  
Figure 1. Logic Diagram  
ALE  
I/Ox - I/O0  
CLE  
CE#  
4Gb  
RE#  
WE#  
WP#  
PT  
R/B#  
P/N: PM2601  
REV. 1.0, November 19, 2018  
Macronix Proprietary  
7

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