Datasheet > MX25L802

MX25L802

更新时间： 2024-01-18 18:59:29

品牌	Logo	应用领域
旺宏电子 - Macronix		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
24页	282K
描述
8M-BIT [8M x 1] CMOS SERIAL FLASH EEPROM

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中文翻译

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数据手册

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MX25L802 数据手册

MX25L802

8M-BIT[8Mx1]CMOSSERIALFLASHEEPROM

FEATURES

GENERAL

SOFTWAREFEATURES

• 8,388,608 x 1 bit structure

• Input Data Format

• 128 Equal Sectors with 8K-byte each

- Any sector can be erased

- 1-byte Command code, 3-byte address, 1-byte byte

address

• 2048 Equal Segments with 512-byte each

- Provides sequential output within any segment

• Single Power Supply Operation

• 512-byte Sequential Read Operation

• Built in 9-bit (A0 to A8) pre-settable address counter

to support the 512-byte sequential read operation

• Auto Erase and Auto Program Algorithm

- Automatically erases and verifies data at selected

sector

- 3.0 to 3.6 volt for read, erase, and program operations

• Latch-up protected to 100mA from -1V to Vcc +1V

• Low Vcc write inhibit is equal to or less than 2.5V

- Automatically programs and verifies data at selected

page by an internal algroithm that automatically times

the program pulse widths (Any page to be programed

should have page in the erased state first)

• Status Register Feature

PERFORMANCE

• HighPerformance

- Fast access time: 20MHz serial clock (50pF + 1TTL

Load)

- Fast program time: 5ms/page (typical, 128-byte per

page)

- Provides detection of program and erase operation

completion.

- Fast erase time: 300ms/sector (typical, 8K-byte per

sector)

- Provides auto erase/ program error report

• LowPowerConsumption

HARDWAREFEATURES

• SCLK Input

- Low active read current: 10mA (typical) at 17MHz

- Low active programming current: 10mA (typical)

- Low active erase current: 10mA (typical)

- Low standby current: 30uA (typical, CMOS)

• Minimum 100,000 erase/program cycle

- Serial clock input

• SI Input

- Serial Data Input

• SO Output

- Serial Data Output

• PACKAGE

- 28-pin SOP (330mil)

P/N:PM0837

REV. 1.1, APR. 13, 2005

12 3 4 5 6 7...24

中文翻译

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