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MURF1640CTD PDF预览

MURF1640CTD

更新时间: 2024-01-28 12:26:34
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THINKISEMI /
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2页 197K
描述
16.0 Ampere Unipolar/Common Anode Ultrafast Recovery Rectifiers

MURF1640CTD 数据手册

 浏览型号MURF1640CTD的Datasheet PDF文件第2页 
MURF1620CTR thru MURF1660CTR  
®
MURF1620CTR thru MURF1660CTR  
Pb Free Plating Product  
16.0 Ampere Unipolar/Common Anode Ultrafast Recovery Rectifiers  
Unit : inch (mm)  
ITO-220AB  
Features  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Environment/Inverters and Converters  
Plating Power Supply/SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
Car Audio Amplifier and Sound Device System  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
Case: Molded plastic Isolated/Insulated ITO-220AB  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1  
(2.55)  
.1  
(2.55)  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.03 grams  
Negative  
Common Cathode Common Anode  
Suffix "CT" Suffix "CTR"  
Positive  
Doubler  
Suffix "CTD"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MURF1620CT  
MURF1640CT  
MURF1660CT  
UNIT  
SYMBOL  
MURF1620CTR MURF1640CTR MURF1660CTR  
MURF1620CTD MURF1640CTD MURF1660CTD  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
A
A
V
IF(AV)  
Current T  
C
=100oC  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
175  
150  
Maximum Instantaneous Forward Voltage  
@ 8.0 A  
V
F
0.98  
1.3  
1.7  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25oC  
uA  
uA  
nS  
10.0  
250  
I
R
J
=125oC  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
pF  
oCW  
C
J
R
JC  
2.2  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to + 150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  

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