Datasheet > MUR860

MUR860

更新时间： 2024-04-09 18:59:08

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描述
Ultrafast power diode in a SMC package.

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MUR860 数据手册

WeEn Semiconductors

MUR860

Ultrafast power diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Values

Unit

V_RRMrepetitive peak reverse

600

voltage

V_RWM

crest working reverse

voltage

600

V_R

reverse voltage

600

I_F(AV)

average forward current δ = 0.5; square-wave pulse; T_lead≤ 95 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward δ = 0.5 ; t_p= 25 μs; T_lead≤ 95 °C;

current

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

180

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse

200

-65 to 175

175

storage temperature

junction temperature

°C

stg

T_j

I_F(AV)= I_F(RMS)× √δ

a = form factor = I_F(RMS)/ I_F(AV)

V_o= 0.918 V; R_s= 0.0168 Ω

Fig. 2. Forward power dissipation as a function of

average forward current; sinusoidal

waveform; maximum values

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

MUR860

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Product data sheet

15 July 2019

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